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Part: PE110F160
Category: Discrete -> Thyristors
Description: Thyristor Module
Company: SanRex Corporation
Datasheet: Download PE110F160 datasheet File size : 556 kB
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Datasheet text preview:
THYRISTOR MODULE
PK(PD,PE,KK)110F
UL:E76102 M£ ¢ Power Thyristor/Diode Module PK110F series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. High precision 25mm (1inch) width package and electrically isolated mounting base make your mechanical design easy.
Ô IT(AV)110A, Ô Ô
IT(RMS)172A, ITSM 2550A di/dt 200 A/ s dv/dt 500V/ s
25 12.5 12
K1 G1 K2 G2
M5X10
2.8 #110TAB
¢ Applications£ Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches
PK
PE
31max 19.5
80¶ 0.2
PD
KK
Ù Maximum Ratings
Ratings Symbol Item PK110F40 PD110F40 PE110F40 KK110F40 400 480 400 PK110F80 PD110F80 PE110F80 KK110F80 800 960 800 PK110F120 PD110F120 PE110F120 KK110F120 1200 1300 1200 PK110F160 PD110F160 PE110F160 KK110F160 1600 1700 1600 Ratings 110 172 2300/2550 26500 10 3 3 10 5 200 2500 µ 40 to ´ 125 µ 40 to ´ 125 2.7¢ 28£ 2.7¢ 28£ 170 Unit
VRRM VRSM VDRM Symbol ¢ IT AV£ ¢ IT RMS£ ITSM I2t PGM ¢ PG AV£ IFGM VFGM VRGM di-- dt VISO Tj Tstg
6.5 29max
Unit· A
3.5
7.5 3.5
2- 6
20
20
92 20
17.5
Î Repetitive Peak Reverse Voltage Î Non-Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage Item Î Average On-State Current Î R.M.S. On-State Curren Î Surge On-State Current Î I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage(Forward) Peak Gate Voltage(Reverse) Critical Rate of Rise of On-State Current Î Isolation Breakdown Voltage (R.M.S.) Î Operating Junction Temperature Î Storage Temperature Mounting M5£ ¢ Mounting Torque Terminal¢ M5£ Mass
V V V Unit A A A A2S W W A V V A/ s B V Æ Æ NK< ¢µ fKBA£ g
Conditions Single phase, half wave, 180Ã conduction, Tc· 88Æ Single phase, half wave, 180Ã conduction, Tc· 88Æ 1 cycle, 50Hz/60Hz, peak Value, non-repetitive --2 Value for one cycle of surge current
IG¹ 100mA| Tj¹ 25Æ| A.C.1minute
VD¹ 1 2VDRM| dIG/dt¹ 0.1A/ s -- B
Recommended 1.5-2.5¢ 15-25£ Recommended 1.5-2.5¢ 15-25£
Ù Electrical Characteristics
Symbol Item DRM I Repetitive Peak Off-State Current, max. IRRM Î Repetitive Peak Reverse Current, max. VTM Î Peak On-State Voltage, max. IGT-- VGT Gate Trigger Current/Voltage, max. VGD Non-Trigger Gate, Voltage. min. tgt Turn On Time, max. Critical Rate of Rise of Off-State Voltage, min. dv-- dt IH Holding Current, typ. IL Lutching Current, typ. Rth j-c£ Î Thermal Impedance, max. ¢
Î mark· Thyristor and Diode part. No mark· Thyristor part
Conditions at VDRM, single phase, half wave, Tj¹ 125Æ at VDRM, single phase, half wave, Tj¹ 125Æ On-State Current 350A, Tj¹ 25Æ Inst. measurement Tj¹ 25Æ| IT¹ 1A| VD¹ 6V Tj¹ 125Æ| VD¹ 1/2VDRM T¹ 110A| IG¹ 100mA| Tj¹ 25Æ| I VD¹ 1 2VDRM| dIG/dt¹ 0.1A/Bs -- 2 VDRM, Exponential wave. Tj¹ 125Æ , VD¹ -- 3 Tj¹ 25Æ Tj¹ 25Æ Junction to case
Ratings 20 20 1.45 100/3 0.25 10 500 50 100 0.25
Unit mA mA V mA/V V s V/ s B mA mA Æ /W
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
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PK(PD,PE,KK)110F
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PE-1 PE-2 PE-3 PE-4 PE-5 PE-6 PE-7 PE-8
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