|
Details, datasheet, quote on part number:PK200GB80
| |
Datasheet text preview:
THYRISTOR MODULE
PK(PD,PE)200GB
UL;E76102 M£ ¢ Power Thyristor/Diode Module PK200GB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 800V are available. Isolated mounting base
Ô Ô Ô ¢ ¢ IT AV£ 200A, IT RMS£ 310A, ITSM 5500A di/dt 200 A/Bs dv/dt 500V/Bs
¢ Applications£ Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches
PK
Internal Configurations
PD
PE
Unit· A
Ù Maximum Ratings
Ratings Symbol VRRM VRSM VDRM Symbol
¢ IT AV£ ¢ IT RMS£
Item Î Repetitive Peak Reverse Voltage Î Non-Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage Item Î Average On-State Current Î R.M.S. On-State Current Î Surge On-State Current Î It
2
PK200GB40 PE200GB40
PD200GB40
PK200GB80 PE200GB80
PD200GB80
Unit V V V
400 480 400 Conditions Single phase, half wave, 180Ã conduction, Tc· 74Æ Single phase, half wave, 180Ã conduction, Tc· 74Æ
1 -- 2cycle,
800 960 800 Ratings 200 310 5000/5500 125000 10 3 3 10 5
Unit A A A A2S W W A V V A/ s B V Æ Æ NK< ¢µ fKBA£ g
ITSM It
2
50Hz/60Hz, peak Value, non-reqetitive
Value for one cycle of surge current
PGM
¢ PG AV£
Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage¢ Forward£ Peak Gate Voltage Reverse£ Critical Rate of Rise of On-State Current Î Isolation Breakdown Voltage¢ R.M.S.£ Î Operating Junction Temperature Î Storage Temperature Mounting Torque Mass Mounting¢ M5£ Terminal¢ M8£ Recommended Value 1.5-2.5¢ 15-25£ Recommended Value 8.8-10 ¢ 90-105£ Typical Value IG¹ 100mA| Tj¹ 25Æ| A.C. 1 minute VD¹
1 -- 2VDRM|
IFGM VFGM VRGM di/dt VISO Tj Tstg
dIG/dt¹ 0.1A/ s B
200 2500 µ 40 UP´ 125 µ 40 UP´ 125 2.7¢ 28£ 11¢ 115£ 510
Ù Electrical Characteristics
Symbol IDRM IRRM VTM IGT/VGT VGD tgt dv/dt IH IL Item Repetitive Peak Off-State Current, max. Î Repetitive Peak Reverse Current, max. Î Peak On-State Voltage, max. Gate Trigger Current/Voltage, max. Non-Trigger Gate, Voltage. min. Turn On Time, max. Critical Rate of Rise of Off-State Voltage, min. Holding Current, typ. Lutching Current, typ. Conditions at VDRM, Single phase, half wave, Tj¹ 125Æ at VDRM, Single phase, half wave, Tj¹ 125Æ On-State Current 600A, Tj¹ 125Æ Tj¹ 25Æ| Tj¹ 125Æ| IT¹ 1A| VD¹ 6V VD¹
2 -- 1 -- 2VDRM
Ratings 50 50 1.50 100/3 0.25 10 500 50 100 0.18
Unit mA mA V mA/V V s V/ s B mA mA Æ /W
Inst. measurement
IT¹ 200A| IG¹ 100mA| Tj¹ 25Æ , VD¹ 1 2VDRM| dIG/dt¹ 0.1A/Bs -- Tj¹ 125Æ , VD¹ Tj¹ 25Æ Tj¹ 25Æ Junction to case
3VDRM, Exponential wave.
Rth j-c£ Î Thermal Impedance, max. ¢
Î mark· Thyristor and Diode part. No mark· Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
;
PK(PD,PE)200GB
|
|
