|
Details, datasheet, quote on part number:PK200HB120
| |
Datasheet text preview:
THYRISTOR MODULE
PK(PD,PE)200HB
UL;E76102 M£ ¢ Power Thyristor/Diode Module PK200HB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. Isolated mounting base Ô IT AV£ 200A, IT RMS£ 310A, ITSM 5500A ¢ ¢ Ô di/dt 200 A/Bs Ô dv/dt 500V/Bs ¢ Applications£ Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches
PK
Internal Configurations
PD
PE
Unit· A
Ù Maximum Ratings
Symbol VRRM VRSM VDRM Symbol
¢ IT AV£ ¢ IT RMS£
Item Î Repetitive Peak Reverse Voltage Î Non-Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage Item Î Average On-State Current Î R.M.S. On-State Current Î Surge On-State Current Î It
2
PK200HB120 PE200HB120
Ratings PD200HB120 PK200HB160 PE200HB160
PD200HB160
Unit V V V
1200 1300 1200 Conditions Single phase, half wave, 180Ã conduction, Tc· 74Æ Single phase, half wave, 180Ã conduction, Tc· 74Æ
1 -- 2cycle,
1600 1700 1600 Ratings 200 310 5000/5500 125000 10 3 3 10 5
Unit A A A A2S W W A V V A/ s B V Æ Æ NK< ¢µ fKBA£ g
ITSM It
2
50Hz/60Hz, peak Value, non-reqetitive
Value for one cycle of surge current
PGM
¢ PG AV£
Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage¢ Forward£ Peak Gate Voltage¢ Reverse£ Critical Rate of Rise of On-State Current Î Isolation Breakdown Voltage¢ R.M.S.£ Î Operating Junction Temperature Î Storage Temperature Mounting Torque Mass Mounting¢ M5£ Terminal¢ M8£ Recommended Value 1.5-2.5¢ 15-25£ Recommended Value 8.8-10 ¢ 90-105£ Typical Value IG¹ 100mA| Tj¹ 25Æ| A.C. 1 minute VD¹
1 -- 2VDRM|
IFGM VFGM VRGM di/dt VISO Tj Tstg
dIG/dt¹ 0.1A/ s B
200 2500 µ 40 UP´ 125 µ 40 UP´ 125 2.7¢ 28£ 11¢ 115£ 510
Ù Electrical Characteristics
Symbol IDRM IRRM VTM IGT/VGT VGD tgt dv/dt IH IL
Î
Item Repetitive Peak Off-State Current, max. Î Repetitive Peak Reverse Current, max. Î Peak On-State Voltage, max. Gate Trigger Current/Voltage, max. Non-Trigger Gate, Voltage. min. Turn On Time, max. Critical Rate of Rise of Off-State Voltage, min. Holding Current, typ. Lutching Current, typ.
Conditions at VDRM, Single phase, half wave, Tj¹ 125Æ at VDRM, Single phase, half wave, Tj¹ 125Æ On-State Current 750A, Tj¹ 125Æ Tj¹ 25Æ| Tj¹ 125Æ| Tj¹ 125Æ| Tj¹ 25Æ Tj¹ 25Æ Junction to case IT¹ 1A| VD¹ 6V VD¹ VD¹
1 -- 2VDRM
Ratings 50 50 1.50 100/3 0.25 10 500 50 100 0.18
Unit mA mA V mA/V V s V/ s B mA mA Æ /W
Inst. measurement
IT¹ 250A| IG¹ 100mA| Tj¹ 25Æ|
2 --
VD¹ 1 2VDRM| dIG/dt¹ 0.1A/Bs --
3VDRM| Exponential wave.
Rth j-c£ Î Thermal Impedance, max. ¢
mark· Thyristor and Diode part. No mark· Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
; ;
PK(PD,PE)200HB
|
|