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Part: QCA150BA60
Category:
Discrete
-> Transistors
-> Bipolar
-> Darlington
Description: High Beta Darlington Transistor Module
Company: SanRex Corporation
Datasheet: Download QCA150BA60 datasheet File size : 398 kB
Request For quote: Find where to buy QCA150BA60
Datasheet text preview:
¢ TRANSISTOR MODULE
Hi-£
QCA150BA60
UL;E76102 M£ ¢ QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode (trr· 200ns). The mounting base of the module is electrically isolated from Semiconductor elements for simple heatsink construction.
Ô IC¹ Ô Ô Ô Ô
95max $ # ¶
&
150A, VCEX¹ 600V Low saturation voltage for higher efficiency. ULTRA HIGH DC current gain hFE. hFE¾ 750 Isolated mounting base VEBO 10V for faster switching speed.
62max ¶
#
9 9
$ #&
&
V
#
&
NBY
¢ Applications£ Motor Control¢ VVVF£, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application
.·
5BC
nit· A
Ù Maximum Ratings
Symbol VCBO VCEX VEBO IC µ IC IB PT Tj Tstg VISO Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Reverse Collector Current Base Current Total power dissipation Junction Temperature Storage Temperature Isolation Voltage Mounting Torque Mass Termina¢ M5£ l A.C.1minute Recommended Value 1.5-2.5¢ 15-25£ Typical Value Mounting M6£ Recommended Value 1.5-2.5¢ 15-25£ ¢ TC¹ 25Æ ¢ p£ ½ 1ms w VBE¹µ 2V Conditions
¢ Tj¹ 25Æ
unless otherwise specified£ Ratings QCA150BA60 600 600 10 150¢ 300£ 150 9 690 µ 40 to ´ 150 µ 40 to ´ 125 2500 2.7¢ 28£ 2.7¢ 28£ 370 Æ V NKm (µ fKB) g Æ Unit V V V A A A W
Ù Electrical Characteristics
Symbol ICBO IEBO
¢ VCEO SUS£ ¢ VCEX SUS£
Item Collector Cut-off Current Emitter Cut-off Current Collector Emitter Sustaning Voltage D.C. Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Reverse Recovery time Thermal Impedance (junction to case) Ic¹µ 150A VCB¹ VCBO VEB¹ VEBO Ic¹ 1A Ic¹ 30A| IB2¹µ
Conditions
Ratings Min. Typ. Max. 2.0 600 450
U
Unit mA mA V
5A
600 750 2.5 3.0 2.0 8.0 2.0 1.8 5V 200 0.18 0.6
hFE
¢ VCE sat£ ¢ VBE sat£
Ic¹ 150A| VCE¹ 2.5V Ic¹ 150A| IB¹ 200mA Ic¹ 150A| IB¹ 200mA Vcc¹ 300V| Ic¹ 150A IB1¹ 300mA| IB2¹µ 3A
V V s V ns Æ /W
ton ts tf VECO trr Rth j-c£ ¢
Vcc¹ 300V| Ic¹ 150A| di/dt¹ 150A/ s| VBE¹µ µ µ Transistor part Diode part
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
QCA150BA60
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
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