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Details, datasheet, quote on part number:QCA200BA60
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Datasheet text preview:
¢ TRANSISTOR MODULE
Hi-£
QCA200BA60
UL;E76102 M£ ¢ QCA200BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode (trr· 200ns). The mounting base of the module is electrically isolated from Semiconductor elements for simple heatsink construction,
Ô IC¹ Ô Ô Ô Ô
200A, VCEX¹ 600V Low saturation voltage for higher efficiency. ULTRA HIGH DC current gain hFE. hFE¾ 750 Isolated mounting base VEBO 10V for faster switching speed.
¢ Applications£ M o t o r Control¢ V V V F £, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application
Unit· A
Ù Maximum Ratings
Symbol VCBO VCEX VEBO IC µ IC IB PT Tj Tstg VISO Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Reverse Collector Current Base Current Total power dissipation Junction Temperature Storage Temperature Isolation Voltage Mounting Torque Mass Mounting M6£ ¢ Termina¢ M6£ l A.C.1minute Recommended Value 2.5-3.9¢ 25-40£ Recommended Value 2.5-3.9¢ 25-40£ Typical Value TC¹ 25Æ ¢ p£ ½ 1ms w VBE¹µ 2V Conditions
¢ Tj¹ 25Æ
unless otherwise specified£ Ratings QCA200BA60 600 600 10 200¢ 400£ 200 12 1250 µ 40 to ´ 150 µ 40 to ´ 125 2500 4.7¢ 48£ 4.7¢ 48£ 470 NKm (µ fKB) g Æ Æ Unit V V V A A A W
Ù Electrical Characteristics
Symbol ICBO IEBO
¢ VCEO SUS£ ¢ VCEX SUS£
Item Collector Cut-off Current Emitter Cut-off Current Collector Emitter Sustaning Voltage D.C. Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Reverse Recovery time Thermal Impedance (junction to case) Ic¹µ 200A Vcc¹ 300V, Ic¹µ Diode part VCB¹ VCBO VEB¹ VEBO Ic¹ 1A Ic¹ 40A| IB2¹µ
Conditions
Ratings Min. Typ. Max. 2.0 800 450
Unit mA mA V
8A
600 750 2.5 3.0 2.0 8.0 2.0 1.8
hFE
¢ VCE sat£ ¢ VBE sat£
Ic¹ 200A| VCE¹ 2.5V Ic¹ 200A| IB¹ 0.26A Ic¹ 200A| IB¹ 0.26A Vcc¹ 300V| Ic¹ 200A IB1¹ 0.4A| IB2¹µ 4A
V V s V ns
ton ts tf VECO trr Rth j-c£ ¢
200A, µ di/dt¹ 200A/ s, VBE¹µ
5V
200 0.1 0.3
Transistor part
Æ /W
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
QCA200BA60
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
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