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Details, datasheet, quote on part number:QCA300BA60
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Datasheet text preview:
¢ TRANSISTOR MODULE
Hi-£
QCA300BA60
UL;E76102 M£ ¢ QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode (trr· 200ns). The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction,
Ô IC¹ Ô Ô Ô Ô
300A, VCEX¹ 600V Low saturation voltage for higher efficiency. ULITRA HIGH DC current gain hFE. hFE¾ 750 Isolated mounting base VEBO 10V for faster switching speed.
¢ Applications£ Motor Control¢ VVVF£, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application
Unit· A
Ù Maximum Ratings
Symbol VCBO VCEX VCEX sus£ ¢ VEBO IC µ IC IB PT Tj Tstg VISO Item Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter sustaining voltage Emitter-Base Voltage Collector Current Reverse Collector Current Base Current Total power dissipation Junction Temperature Storage Temperature Isolation Voltage Mounting Torque Mass Mounting M6£ ¢ Terminal¢ M6£ A.C.1minute Recommended Value 2.5-3.9¢ 25-40£ Recommended Value 2.5-3.9¢ 25-40£ Typical Value TC¹ 25Æ ¢ p£ ½ 1ms w VBE¹µ 2V 5A IC¹ 60V IB2¹µ Conditions
¢ Tj¹ 25Æ
unless otherwise specified£ Ratings QCA300BA60 600 600 600 10 300¢ 600£ 300 18 1380 µ 40 to ´ 150 µ 40 to ´ 125 2500 4.7¢ 48£ 4.7¢ 48£ 675 Æ V NKm (µ fKB) g Æ Unit V V V V A A A W
Ù Electrical Characteristics
Symbol ICBO IEBO hFE
¢ VCE sat£ ¢ VBE sat£
Item Collector Cut-off Current Emitter Cut-off Current D.C. Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Reverse Recovery time Thermal Impedance (junction to case) VCB¹ VCBO VEB¹ VEBO
Conditions
Ratings Min. Typ. Max. 4.0 500 750 2.5 3.0 2.0 8.0 2.0 2.2
Unit mA mA V V s V ns
Ic¹ 300A| VCE¹ 2.5V Ic¹ 300A| IB¹ 400mA Ic¹ 300A| IB¹ 400mA
ton ts tf VECO trr Rth j-c£ ¢
Vcc¹ 300V| Ic¹ 300A IB1¹ 0.6A| IB2¹µ 6A Ic¹µ 300A 300A, µ di/dt¹ 300A/As, VBE¹µ 5V 200
Vcc¹ 300V, Ic¹µ Diode part
Transistor part
0.08 0.35
Æ /W
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
QCA300BA60
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
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