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Part: 2SA1474

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> General Purpose

Description: PNP Epitaxial Planar Silicon Transistor, Very High-definition CTR Display Video-output Application

Company: Sanyo Semiconductor Corporation

Datasheet: Download 2SA1474 datasheet     File size : 269 kB

Request For quote: Find where to buy 2SA1474



Datasheet text preview:
Ordering number:EN2526

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1474/2SC3780
Ultrahigh-Definition CRT Display Video Output Applications
Applications
· Video Output. · Color TV chroma output. · Wide-band amp.

Package Dimensions
unit:mm 2010C
[2SA1474/2SC3780]

Features
· High fT (fT typ=800MHz). · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=3.0pF (NPN), 4.7pF (PNP). · Complementary PNP and NPN types. · Adoption of FBET process.

( ) : 2SA1474

JEDEC : TO-220AB EIAJ : SC-46

Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions

E : Emitter C : Collector B : Base

Ratings (­)80 (­)60 (­)4 (­)800 (­)1 1.5

Unit V V V mA A W W

Tc=50°C
Tj Tstg

15 150 ­55 to +150

°C °C

Electrical Characteristics at Ta = 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE1 hFE2 fT VCE(sat) VBE(sat) VCB=(­)60V, IE=0 VEB=(­)2V, IC=0 VCE=(­)10V, IC=(­)50mA VCE=(­)10V, IC=(­)400mA VCE=(­)10V, IC=(­)100mA IC=(­)100mA, IB=(­)10mA IC=(­)100mA, IB=(­)10MA (­)80 (­)60 (­)4 3.5 (5.3) Cre VCB=(­)30V, f=1MHz 3.0 (4.7) 40* 20 800 0.6 (­0.8) (­)1.0 V(BR)CBO IC=(­)10µA, IE=0 V(BR)CEO IC=(­)1mA, RBE= V(BR)EBO IE=(­)100µA, IC=0 Cob VCB=(­)30V, f=1MHz MHz V V V V V V pF pF pF pF Conditions Ratings min typ max (­)0.1 (­)1.0 320* Unit µA µA

*: The 2SA1474/2SC3780 are classified by 50mA hFE as follows :
40 C 80 60 D 120 100 E 200 160 F 320

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/4077TA, TS No.2526-1/4

2SA1474/2SC3780

No.2526-2/4

2SA1474/2SC3780

No.2526-3/4

2SA1474/2SC3780

No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1998. Specifications and information herein are subject to change without notice.
PS No.2526-4/4




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