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Part: 2SA1478

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> General Purpose

Description: PNP Epitaxial Planar Silicon Transistor, High-definition CTR Display Video-output Application

Company: Sanyo Semiconductor Corporation

Datasheet: Download 2SA1478 datasheet     File size : 269 kB

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Datasheet text preview:
Ordering number:EN2253A

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1478/2SC3788
High-Definition CRT Display Video Output Applications
Features Package Dimensions
unit:mm 2042A
[2SA1478/2SC3788]

· High breakdown voltage : VCEO200V. · Small reverse transfer capacitance and excellent high frequency cahaceteristic : Cre=1.2pF (NPN), 1.7pF (PNP). · Adoption of FBET process.

B : Base C : Collector E : Emitter

( ) : 2SA1478

Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions

SANYO : TO-126ML

Ratings (­)200 (­)200 (­)5 (­)100 (­)200 1.3

Unit V V V mA mA W W

Tc=25°C
Tj Tstg

5 150 ­55 to +150

°C °C

Electrical Characteristics at Ta = 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Symbol ICBO IEBO hFE fT Cob Cre VCE(sat) VBE(sat) VCB=(­)150V, IE=0 VEB=(­)4V, IC=0 VCE=(­)10V, VCE=(­)30V, IC=(­)10mA 40* 150 1.7 (2.6) VCB=(­)30V, f=1MHz IC=(­)20mA, IB=(­)2mA IC=(­)20mA, IB=(­)2mA (­)200 (­)200 (­)5 1.2 (1.7) (­)0.6 (­)1.0 IC=(­)10mA VCB=(­)30V, f=1MHz Conditions Ratings min typ max (­)0.1 (­)0.1 320* MHz pF pF pF pF V V V V V Unit µA µA

V(BR)CBO IC=(­)10µA, IE=0 V(BR)CEO IC=(­)1mA, RBE= V(BR)EBO IE=(­)10µA, IC=0

* : The 2SA1478/2SC3788 are classified by 10mA hFE as follows:
40 C 80 60 D 120 100 E 200 160 F 320

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3247TA, TS No.2253-1/4

2SA1478/2SC3788

No.2253-2/4

2SA1478/2SC3788

No.2253-3/4

2SA1478/2SC3788

No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1998. Specifications and information herein are subject to change without notice.
PS No.2253-4/4




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