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Part: 2SA1480
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: PNP Epitaxial Planar Silicon Transistor, High-definition CTR Display Video-output Application
Company: Sanyo Semiconductor Corporation
Datasheet: Download 2SA1480 datasheet File size : 269 kB
Request For quote: Find where to buy 2SA1480
Datasheet text preview:
Ordering number:EN2254
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1480/2SC3790
High-Definiton CRT Display Video Output Applications
Features Package Dimensions
unit:mm 2042A
[2SA1480/2SC3790]
· High breakdown voltage (VCEO300V). · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process.
B : Base C : Collector E : Emitter
( ) : 2SA1480
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions
SANYO : TO-126ML
Ratings ()300 ()300 ()5 ()100 ()200 1.5
Unit V V V mA mA W W
Tc=25°C
Tj Tstg
7 150 55 to +150
°C °C
Electrical Characteristics at Ta = 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Symbol ICBO IEBO hFE fT Cob Cre VCE(sat) VBE(sat) VCB=()200V, IE=0 VEB=()4V, IC=0 VCE=()10V, IC=()10mA VCE=()30V, IC=()10mA VCB=()30V, f=1MHz VCB=()30V, f=1MHz IC=()20mA, IB=()2mA ()300 ()300 ()5 40* 150 2.6 (3.1) 1.8 (2.3) ()0.6 ()1.0 IC=()20mA, IB=()2mA V(BR)CBO IC=()10µA, IE=0 V(BR)CEO IC=()1mA, RBE= V(BR)EBO IE=()10µA, IC=0 Conditions Ratings min typ max ()0.1 ()0.1 320* MHz pF pF pF pF V V V V V Unit µA µA
* : The 2SA1480/2SC3790 are classified by 10mA hFE as follows :
40 C 80 60 D 120 100 E 200 160 F 320
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/4087TA, TS No.2254-1/4
2SA1480/2SC3790
No.2254-2/4
2SA1480/2SC3790
No.2254-3/4
2SA1480/2SC3790
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1998. Specifications and information herein are subject to change without notice.
PS No.2254-4/4
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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