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Part: 2SC3495
Category: Discrete -> Transistors -> Bipolar -> General Purpose
Description: NPN Epitaxial Planar Silicon Transistor, High H(FE), Low-frequency General-purpose Amp Application
Company: Sanyo Semiconductor Corporation
Datasheet: Download 2SC3495 datasheet File size : 121 kB
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Datasheet text preview:
Ordering number:EN1430B
NPN Epitaxial Planar Silicon Transistor
2SC3495
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
· AF amplifier, various driver, muting circuit.
Package Dimensions
unit:mm 2003A
[2SC3495]
Features
· Adoption of FBET process. · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO100V). · Low collector-to-emitter saturation voltage (VCE(sat)0.5V). · High VEBO (VEBO15V). · Small Cob (Cob=1.8pF typ).
JEDEC : TO-92 EIAJ : SC-43
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions
B : Base C : Collector E : Emitter SANYO : NP
Ratings 120 100 15 50 100 10 500 150 55 to +150
Unit V V V mA mA mA mW
°C °C
Electrical Characteristics at Ta = 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=80V, IE=0 VEB=10V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=10mA VCB=10V, f=1MHz 500 1000 170 1.8 Conditions Ratings min typ max 0.1 0.1 2000 MHz pF Unit µA µA
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/6140MO/4237AT/D174MY, TS No.14301/3
2SC3495
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol VCE(sat) VBE(sat) IC=10mA, IB=200µA IC=10mA, IE=200µA 120 100 15 Conditions Ratings min typ 0.1 0.7 max 0.5 1.0 Unit V V V V V
V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO IE=10µA, IC=0
No.14302/3
2SC3495
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all s e m i c o n d u c t o r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. I n the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, s u c h products must not be expor t e d without obtaining the expor t license from the authorities c o n c e r n e d in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or m e c h a n i c a l , including photocopying and recording, or any information storage or retrieval system, o r otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. I n f o r m a t i o n (including circuit diagrams and circuit parameters) herein is for example only ; it is not g u a r a n t e e d for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of November, 1998. Specifications and information herein are subject to change without notice.
PS No.14303/3
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