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Part: 2SC4104
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: NPN Epitaxial Planar Silicon Transistor, High-frequency Amp, Wide-band Amp Application
Company: Sanyo Semiconductor Corporation
Datasheet: Download 2SC4104 datasheet File size : 49 kB
Request For quote: Find where to buy 2SC4104
Datasheet text preview:
Ordering number:EN3172
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1580/2SC4104
High-Definition CRT Display Applications
Features
· High fT. · Small reverse transfer capacitance. · Adoption of FBET process.
Package Dimensions
unit:mm 2018A
[2SA1580/2SC4104]
C : Collector B : Base E : Emitter
( ) : 2SA1580
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
SANYO : CP
Ratings ()70 ()60 ()4 ()50 ()100 200 150 55 to +150
Unit V V V mA mA mW
°C °C
Electrical Characteristics at Ta = 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Base-to-Collector Time Constant Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO hFE fT rbb',cc Cob Cre VCE(sat) VBE(sat) VCB=()40V, IE=0 VEB=()3V, IC=0 VCE=()10V, IC=()10mA VCE=()10V, IC=()10mA VCE=()10V, IC=()10mA VCB=()10V, f=1MHz VCB=()10V, f=1MHz IC=()20mA, IB=()2mA 60* 350 700 8 1.3 (1.7) 1.0 (1.3) 0.5 (0.6) IC=()20mA, IB=()2mA V(BR)CBO IC=()10µA, IE=0 V(BR)CEO IC=()1mA, RBE= V(BR)EBO IE=()10µA, IC=0 ()1.0 ()70 ()60 ()4 Conditions Ratings min typ max ()0.1 ()1.0 270* MHz ps pF pF pF pF V V V V V V Unit µA µA
* : The 2SA1580/2SC4104 are classified by 10mA hFE as follows :
60 3 120 90 4 180 135 5 270
Marking 2SA1580 : QL 2SC4104 : YY hFE rank : 3,4,5
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72098HA (KT)/7139MO, TS No.3172-1/2
2SA1580/2SC4104
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1998. Specifications and information herein are subject to change without notice.
PS No.3172-2/2
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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