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Part: 2SC4493

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> General Purpose

Description: NPN Triple Diffused Planar Silicon Transistor, High-voltage Amp, High-voltage Switching Application

Company: Sanyo Semiconductor Corporation

Datasheet: Download 2SC4493 datasheet     File size : 83 kB

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Datasheet text preview:
Ordering number:EN3099

NPN Triple Diffused Planar Silicon Transistor

2SC4493
High-Voltage Amplifier, High-Voltage Switching Applications
Features
· High breakdown voltage. · Small Cob. · High reliability (Adoption of HVP process). · Intended for high-density mounting (Suitable for sets whose height is restricted).

Package Dimensions
unit:mm 2049C
[2SC4493]
10.2 0.9 4.5 1.3

11.5

20.9

1.6

1.2

9.4

0.8

11.0

8.8

0.4

1

2

3

Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions

2.55

2.55

1 : Base 2 : Collector 3 : Emitter SANYO : TO-220MF

2.7

Ratings 800 800 7 20 60 1.65 150 ­55 to +150

Unit V V V mA mA W
°C °C

Electrical Characteristics at Ta = 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE1 hFE2 fT VCE(sat) VBE(sat) VCB=800V, IE=0 VEB=5V, IC=0 VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=10V, IC=2mA IC=10mA, IB=2mA IC=10mA, IB=2mA Conditions Ratings min typ max 1 1 20 10 40 1 1.5 MHz V V 50 Unit µA µA

Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2598HA (KT)/4139MO, TS No.3099­1/3

2SC4493
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Symbol V(BR)CBO IC=100µA, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO Cob IE=100µA, IC=0 VCB=100V, f=1MHz Conditions Ratings min 800 800 7 1.6 typ max Unit V V V pF

No.3099­2/3

2SC4493

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all s e m i c o n d u c t o r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. I n the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, s u c h products must not be expor t e d without obtaining the expor t license from the authorities c o n c e r n e d in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or m e c h a n i c a l , including photocopying and recording, or any information storage or retrieval system, o r otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. I n f o r m a t i o n (including circuit diagrams and circuit parameters) herein is for example only ; it is not g u a r a n t e e d for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of December, 1998. Specifications and information herein are subject to change without notice.
PS No.3099­3/3




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