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Part: 2SC5291

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> General Purpose

Description:

Company: Sanyo Semiconductor Corporation

Datasheet: Download 2SC5291 datasheet     File size : 241 kB

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Datasheet text preview:
Ordering number : ENN5282A

2SC5291
NPN Epitaxial Planar Silicon Transistor

2SC5291
High-Voltage Switching Applications
Features
· · · ·

Package Dimensions
unit : mm 2084B
[2SC5291]
10.5 1.9 4.5
1.2

Adoption of FBET, MBIT processes. Large current capacity. Can be provided in taping. 9.5mm onboard mounting height.

2.6 1.4

7.5

1.2 1.6 0.5 1 2 3

1.0

8.5

0.5

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions

1 : Emitter 2 : Collector 3 : Base
2.5 2.5

SANYO : FLP
Ratings 180 160 6 1.5 2.5 300 1.5 150 --55 to +150 Unit V V V A A mA W °C °C

Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO I EBO VCB=120V, IE=0 VEB=4V, IC=0 Conditions Ratings min typ max 1.0 1.0 Unit µA µA

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12201 TS IM TA-0376 No.5282-1/4

2SC5291
Continued from preceding page.
Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Turn-ON Time Storage Time Fall Time Symbol hFE1 hFE2 fT Cob VCE(sat) VBE(sat) ton tstg tf Conditions VCE=5V, IC=100mA VCE=5V, IC=10mA VCE=10V, IC=50mA VCB=10V, f=1MHz IC=500mA, IB=50mA IC=500mA, IB=50mA See specified Test Circuit See specified Test Circuit See specified Test Circuit Ratings min 100 90 120 14 0.13 0.85 4.0 1.2 8.0 0.45 1.2 MHz pF V V ns µs ns typ max 400 Unit

* : The 2SC5291 is classified by 100mA hFE as follows : Rank hFE R S T 100 to 200 140 to 280 200 to 400

Switching Time Test Circuit
IB1 INPUT IB2 RB PW=20µs D.C.=1% RL 50 VR + 100µF VBE= --5V + 470µF VCC=100V OUTPUT

10IB1=--10IB2=IC=700mA RL=140, RB=14 at IC=700mA
1.8 1.6

IC -- VCE

1.0

IC -- VCE
5.0

A 4.5m mA 4.0
3.5mA

Collector Current, IC -- A

Collector Current, IC -- A

1.4 1.2 1.0 0.8 0.6

50mA 40mA 30mA
20mA 10mA 5mA

0.8

m

A

3.0mA
0.6

2.5mA 2.0mA

0.4

1.5mA 1.0mA

2mA
0.4

0.2

1mA
0.2 0

0.5mA
0

IB=0
0 1 2 3 4 5 ITR08045

IB=0
0 10 20 30 40 50 ITR08046

Collector-to-Emitter Voltage, VCE -- V
1.6

IC -- VBE

Collector-to-Emitter Voltage, VCE -- V
1000 7 5

hFE -- IC

VCE=5V

VCE=5V

Collector Current, IC -- A

DC Current Gain, hFE

1.2

3 2

Ta=75°C 25°C

0.8

100 7 5 3 2

--25°C

5°C 25°C

0.4

0

Ta= 7

--25°C

0

0.2

0.4

0.6

0.8

1.0

1.2 ITR08047

10

7 0.01

2

3

5

7 0.1

2

3

5

7 1.0

2

3

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- A

ITR08048

No.5282-2/4

2SC5291
5

fT -- IC
VCE=10V

100 7

Cob -- VCB
f=1MHz

Gain-Bandwidth Product, f T -- MHz

3

Output Capacitance, Cob -- pF

5

2

3 2

100 7 5

10 7 5

3 2

(For PNP, minus sign is omitted.)
10 0.01 2 3 5 7 0.1 2 3 5 7

Collector Current, IC -- A
3

2 1.0 ITR08049

3 1

(For PNP, minus sign is omitted.)
2 3 5 7 10 2 3 5

VCE(sat) -- IC

Collector-to-Base Voltage, VCB -- V
10 7

7 100 ITR08050

VBE(sat) -- IC

Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV

2

IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V

IC / IB=10

1000 7 5 3 2

5

3 2

100 7 5 3 2 7 0.01 2

1.0

Ta= --25°C
7 5

25°C

Ta=75°C
--25°C
3

25°C

75°C

57

0.1

2

3

5

7 1.0

2

3

3

7 0.01

2

3

5

7 0.1

2

3

5

7 1.0

2

3

Collector Current, IC -- A
5 3 2

ITR08051 1.6 1.5 1.4

Collector Current, IC -- A

ITR08052

Forward Bias A S O
ICP=2.5A IC=1.5A

PC -- Ta

Collector Current, IC -- A

1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5

0m

s

Collector Dissipation, PC -- W
2 7 100 V ITR08053

10
DC

10

ms

1m s

1.2 1.0 0.8 0.6 0.4 0.2 0

op

era

tio

n

Tc=25°C Single pulse
57 1.0 2 3 5 7 10 2 3 5

0

20

40

60

80

100

120

140

160

Collector-to-Emitter Voltage, VCE --

Ambient Temperature, Ta -- °C

ITR08054

No.5282-3/4

2SC5291

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all s e m i c o n d u c t o r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. I n the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, s u c h products must not be expor t e d without obtaining the expor t license from the authorities c o n c e r n e d in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or m e c h a n i c a l , including photocopying and recording, or any information storage or retrieval system, o r otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. I n f o r m a t i o n (including circuit diagrams and circuit parameters) herein is for example only ; it is not g u a r a n t e e d for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice.
PS No.5282-4/4




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