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Part: 2SD1046

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> General Purpose

Description: NPN Planar Silicon Transistor, For LF Power Amp, 50W Output, Large Power Switching

Company: Sanyo Semiconductor Corporation

Datasheet: Download 2SD1046 datasheet     File size : 206 kB

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Datasheet text preview:
Ordering number:677D

PNP/NPN Epitaxial Planar Silicon Transistors

2SB816/2SD1046
For LF Power Amplifier, 50W Output Large Power Switching Applications
Features
· Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of built-in ballast resistance. · Goode dependence of fT on current and good HF characteristic.

Package Dimensions
unit:mm 2022A
[2SB816/2SD1046]

( ) : 2SB816

1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB

Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions

Ratings (­)150 (­)120 (­)6 (­)8 (­)12

Unit V V V A A W

Tc=25°C

80 150 ­40 to +150

°C °C

Electrical Characteristics at Ta = 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=(­)80V, IE=0 VEB=(­)4V, IC=0 VCE=(­)5V, IC=(­)1A VCE=(­)5V, IC=(­)5A VCE=(­)5V, IC=(­)1A VCB=(­)10V, f=1MHz 60* 20 15 (220) 160 MHz pF pF Conditions Ratings min typ max (­)0.1 (­)0.1 200* Unit mA mA

* : The 2SB816/2SD1046 are classified by 1A hFE as follows :
60 D 120 100 E 200

Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/4017KI/6284KI, MT No.677­1/4

2SB816/2SD1046
Parameter Base-to-Emitter Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Fall Time Storage Time Symbol Conditions Ratings min typ 1.0 (­)150 (­)120 (­)120 (­)6 (0.22) 0.22 tf tstg See specified test circuit. See specified test circuit. (0.37) 1.02 (0.93) 6.66 max 1.5 2.0 Unit V V V V V V µs µs µs µs µs µs

VBE VCE=(­)5V, IC=(­)1A VCE(sat) IC=(­)5A, IB=(­)0.5A V(BR)CBO IC=(­)5mA, IE=0 V(BR)CEO IC=(­)5mA, RBE= IC=(­)50mA, RBE= V(BR)EBO ton IE=(­)5mA, IC=0 See specified test circuit.

Swicthing Time Test Circuit

No.677­2/4

2SB816/2SD1046

No.677­3/4

2SB816/2SD1046

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all s e m i c o n d u c t o r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. I n the event that any and all SANYO products described or contained herein fall under strategic products (including services) controlled under the Foreign Exchange and Foreign Trade Control Law of Japan, s u c h products must not be exported without obtaining export license from the Ministry of I n t e r n a t i o n a l Trade and Industry in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or m e c h a n i c a l , i n c l u d i n g photocopying and recording, o r any information storage or retrieval system, o r otherwise, w i t h o u t the prior written permission of SANYO Electric Co. , L t d . Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. I n f o r m a t i o n (including circuit diagrams and circuit parameters) herein is for example only ; i t is not g u a r a n t e e d for volume production. SANYO believes information herein is accurate and reliable, b u t no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of September, 1998. Specifications and information herein are subject to change without notice.
PS No.677­4/4




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