Details, datasheet, quote on part number: 2SD600K
Part2SD600K
CategoryDiscrete => Transistors => Bipolar => General Purpose
DescriptionNPN Epitaxial Planar Silicon Transistor, 120V/1A Low Frequency Power Amp Application
CompanySanyo Semiconductor Corporation
DatasheetDownload 2SD600K datasheet
Quote
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Features, Applications

Features

High breakdown voltage VCEO 100/120V, High current 1A. Low saturation voltage, excellent hFE linearity.

Specifications

Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions D600 ()100

Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Brakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Symbol V(BR)CBO IC=()10A, IE=0 V(BR)CEO IC=()1mA, RBE= V(BR)EBO ICBO IEBO VEB=()4V, IC=0 Conditions B631K, D600K Ratings min typ max Unit A

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

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Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Fall Time Turn-OFF Time Storage Time Symbol hFE2 fT Cob VCE(sat) VBE(sat) tf toff tstg Conditions IC=()500mA, IB=()50mA See specified Test Circuit See specified Test Circuit See specified Test Circuit Ratings min MHz V ns typ max 320* Unit


 

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