Digchip : Database on electronics components
 
Member, Distributor  
Log In
Email:
Password:


Part: 2SD612K

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> General Purpose

Description: NPN Epitaxial Planar Silicon Transistor, 35V/2A Low Frequency Power Amp Application

Company: Sanyo Semiconductor Corporation

Datasheet: Download 2SD612K datasheet     File size : 256 kB

Request For quote: Find where to buy 2SD612K



Datasheet text preview:
Ordering number:341G

PNP/NPN Epitaxial Planar Silicon Transistor

2SB632, 632K/2SD612, 612K
25V/35V, 2A Low-Frequency Power Amplifier Applications
Features
· High collector dissipation and wide ASO.

Package Dimensions
unit:mm 2009B
[2SB632, 632K/2SD612, 612K]

( ) : 2SB632, 632K

1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126

Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions 2SB632, D612 (­)25 (­)25

2SB632K, D612K (­)35 (­)35 (­)5 (­)2 (­)3 1

Unit V V V A A W W

Tc=25°C
Tj Tstg

10 150 ­55 to +150

°C °C

Electrical Characteristics at Ta = 25°C
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Brakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Symbol V(BR)CBO IC=(­)10µA, IE=0 V(BR)CEO IC=(­)1mA, RBE= V(BR)EBO ICBO IEBO IE=(­)10µA, IC=0 VCB=(­)20V, IE=0 VEB=(­)4V, IC=0 Conditions B632, D612 B632K, D612K B632, D612 B632K, D612K Ratings min (­)25 (­)35 (­)25 (­)35 (­)5 (­)1 (­)1 typ max Unit V V V V V µA µA

* : The 2SB632/2SD612 are classified by 500mA hFE as follows :

60

D

120

100

E

200

160

F

320

Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/90595MO (KOTO)/4017KI/D174MW, TS/E108, 8-2176 No.341­1/9

2SB632, 632K/2SD612, 612K
Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Turn-ON Time Fall Time Storage Time Symbol hFE1 hFE2 fT Cob VCE(sat) VBE(sat) ton tf tstg Conditions VCE=(­)2V, IC=(­)500mA VCE=(­)2V, IC=(­)1.5A VCE=(­)10V, IC=(­)50mA VCB=(­)10V, f=1MHz IC=(­)1.5A, IB=(­)0.15A IC=(­)1.5A, IB=(­)0.15A See specified Test Circuit See specified Test Circuit See specified Test Circuit Ratings min 60* 30 100 (45)30 (­0.4) 0.3 (­)1.1 (60)50 (80) 100 400 (­0.9) 0.8 (­)1.5 MHz pF V V V ns ns ns ns typ max 320* Unit

Switching Time Test Circuit

No.341­2/9

2SB632, 632K/2SD612, 612K

No.341­3/9

2SB632, 632K/2SD612, 612K

Sample Application Circuit 1 : 8W pure complementary amplifier using the 2SB632K/2SD612K [Specifications] Power supply : 100V AC supply transformer with no signal=28.8V. Maximum output=(THD=5%)=25V, f=1kHz, RL=8, Rg=600.
Parameter Quiescent Current (Collector Current) Symbol ICCO ID IC Voltage Gain Output Power Total Harmonic Distortion Input Resistance Output Resistance VG VG PO THD ri ro Output stage Drive stage First stage Without NFB With NFB THD=5% PO=1W PO=1W PO=1W Conditions typ 14.0 42.0 1.4 75 40 8.7 0.05 60 0.2 Unit mA mA mA dB dB W % k

No.341­4/9

2SB632, 632K/2SD612, 612K

Unit (resistance : , capacitance : F)

No.341­5/9




Others parts begin by 2s
2S-1   2S-2   2S-3   2S-4   2S-5   2S-6   2S-7   2S-8   2S-9   2S-10   2S-11   2S-12   2S-13   2S-14   2S-15   2S-16   2S-17   2S-18   2S-19   2S-20   2S-21   2S-22   2S-23   2S-24   2S-25   2S-26   2S-27   2S-28   2S-29   2S-30   2S-31   2S-32   2S-33   2S-34   2S-35   2S-36   2S-37   2S-38   2S-39   2S-40   2S-41   2S-42   2S-43   2S-44   2S-45   2S-46   2S-47   2S-48   2S-49