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Part: 2SD613P

Category:

Description:

Company: Sanyo Semiconductor Corporation

Datasheet: Download 2SD613P datasheet     File size : 136 kB

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Datasheet text preview:
Ordering number : ENN6662

2SB633P/2SD613P
PNP / NPN Epitaxial Planar Silicon Transistors

2SB633P / 2SD613P
85V / 6A, AF 35 to 45W Output Applications
Features
High breakdown voltage, VCEO 85V, high current 6A. · AF 35 to 45W output.
·

Package Dimensions
unit : mm 2010C
[2SB633P / 2SD613P]
10.2 3.6 5.1
2.7 6.3

4.5

1.3

18.0

5.6

1.2
14.0

0.8

15.1

0.4

123

Specifications
( ) : 2SB633P Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.55

2.55

2.7

1 : Base 2 : Collector 3 : Emitter SANYO : TO-220

Ratings (-)100 (-)85 (-)6 (-)6 (-)10

Unit V V V A A W °C °C

Tc=25°C

60 150 -55 to +150

Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO I EBO Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 Ratings min typ max (--)0.1 (--)0.1 Unit mA mA

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13001 TS IM TA-3082 No.6662-1/4

2SB633P/2SD613P
Continued from preceding page.
Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Fall Time Storage Time Symbol hFE1 hFE2 fT Cob VCE(sat) VBE V(BR)CBO V(BR)CEO V(BR)EBO ton tf tstg Conditions VCE=(--)5V, IC=(- )1A VCE=(--)5V, IC=(- )3A VCE=(--)5V, IC=(- )1A VCB=(--)10V, f=1MHz IC=(--)4A, IB=(--)0.4A VCE=(--)5V, IC=(- )1A IC=(--)5mA, IE=0 IC=(--)5mA, RBE= IC=(--)50mA, RBE= IE=(- )5mA, IC=0 See specified test circuit. See specified test circuit. See specified test circuit. (--)100 (--)85 (--)85 (--)6 (0.16)0.28 (0.33)0.50 (1.45)3.60 Ratings min 40* 20 15 (150)110 (--)2.0 (--)1.5 MHz pF V V V V V V µs µs µs typ max 320* Unit

* : The 2SB633P / 2SD613P are classified by 1A hFE as follows : Rank hFE D 60 to 120 E 100 to 200 F 160 to 320

Swicthing Time Test Circuit
IB1 PW=20µs INPUT 51 200VR 20 VCC=20V 1µF VBE= --2V 1µF IB2 1 OUTPUT

10IB1= --10IB2=IC=1A For PNP, the polarity is reversed.

--5

IC -- VCE
2SB633P

5

IC -- VCE
2SD613P

Collector Current, IC -- A

Collector Current, IC -- A

--4

--1

00mA
--60mA

--80mA

4

100mA
80mA

--3

3

60mA

--40mA
--2

40mA
2

--20mA
--1

20mA
1

--10mA

10mA

0 0 --10 --20 --30

IB=0
--40 --50 IT02142

0 0 10 20 30

IB=0
40 50 IT02143

Collector-to-Emitter Voltage, VCE -- V

Collector-to-Emitter Voltage, VCE -- V

No.6662-2/4

2SB633P/2SD613P
5

IC -- VBE
Gain-Bandwidth Product, f T -- MHz
2SB633P / 2SD613P VCE=5V

100 7 5

f T -- IC
VCE=5V

Collector Current, IC -- A

4

3 2

3

2SD
2SB

613P

2

10 7 5 3 0.1

633P

1

0 0.4

(For PNP minus sign is omitted)
0.6 0.8 1.0 1.2 1.4 IT02144

(For PNP minus sign is omitted)
2 3 5 7 1.0 2 3 5

Base-to-Emitter Voltage, VBE -- V
3 2

Collector Current, IC -- A
1000 7

7 10 IT02145

hFE -- IC
VCE=5V

Cob -- VCB
f=1MHz

Output Capacitance, Cob -- pF

5

DC Current Gain, hFE

100 7 5

2SB

633

P

3 2

2SD613

P

2SB 63 2SD 3P 613 P

3 2

100 7 5

10 0.1

(For PNP minus sign is omitted)
2 3 5 7 1.0 2 3 5

Collector Current, IC -- A
5 3

10 IT02146

7

3 1.0

(For PNP minus sign is omitted)
2 3 5 7 10 2 3 5

Collector-to-Base Voltage, VCB -- V
5

7 100 IT02147

VCE(sat) -- IC

VBE(sat) -- IC
IC / IB=10

IC / IB=10

Collector-to-Emitter Saturation Voltage, VCE(sat) -- V

2 1.0 7 5 3 2 0.1 7 5 3 0.1

Base-to-Emitter Saturation Voltage, VBE(sat) -- V

3

2

2SD

613
B

P
3P

1.0 7 5

2S

63

P 2SB633 3P 2SD61

(For PNP minus sign is omitted)
2 3 5 7 1.0 2 3 5

Collector Current, IC -- A
2 10 7

10 IT02148

7

3 0.1

(For PNP minus sign is omitted)
2 3 5 7 1.0 2 3 5

ASO

Collector Current, IC -- A
70

7 10 IT02149

PC -- Tc

ICP=10A IC=6A
DC

2SB633P / 2SD613P
60

2SB633P / 2SD613P

5 3 2 1.0 7 5 3 2 0.1 5

Collector Dissipation, PC -- W

Collector Current, IC -- A

1 10 0m op 0m s s er ati on

50

40

30

20

10

(For PNP minus sign is omitted)
7 10 2 3 5 7 100 2 IT02150

0 0

(For PNP minus sign is omitted)
20 40 60 80 100 120 140 160

Collector-to-Emitter Voltage, VCE -- V

Case Tamperature, Tc -- °C

IT02151

No.6662-3/4

2SB633P/2SD613P

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all s e m i c o n d u c t o r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. I n the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, s u c h products must not be expor t e d without obtaining the expor t license from the authorities c o n c e r n e d in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or m e c h a n i c a l , including photocopying and recording, or any information storage or retrieval system, o r otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. I n f o r m a t i o n (including circuit diagrams and circuit parameters) herein is for example only ; it is not g u a r a n t e e d for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice.
PS No.6662-4/4




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