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Part: 2SJ192

Category:
 Discrete
   -> Transistors
     -> FETs (Field Effect Transistors)
       -> MOSFETs

Description: P-channel MOS Silicon Fet, Very High-speed Switching Application

Company: Sanyo Semiconductor Corporation

Datasheet: Download 2SJ192 datasheet     File size : 412 kB

Request For quote: Find where to buy 2SJ192



Datasheet text preview:
Ordering number:EN3765

P-Channel Silicon MOSFET

2SJ192
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

Package Dimensions
unit:mm 2083B
[2SJ192]
1.5

6.5 5.0

2.3 0.5

4

0.85 0.7
0.8 1.6

5.5

7.0

1.2
7.5

0.6

0.5

1 : Gate
1 2 3

2 : Drain 3 : Source
2.3

2.3

SANYO : TP

unit:mm 2092B
6.5 5.0 4

[2SJ192]
1.5

2.3 0.5

5.5

7.0

0.85

0.5

1 0.6

0.8

2

3

2.5

1.2 0 to 0.2

1.2

2.3

2.3

1 : Gate 2 : Drain 3 : Source SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40199TH (KT)/41293TH (KOTO) 8-7543, 7921 No.3765­1/4

2SJ192 Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% T c = 2 5° C Conditions Ratings ­60 ±15 ­4 ­16 30 150 ­55 to +150 Unit V V A A W °C °C

Electrical Characteristics at Ta = 25°C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD ID=­1mA, VGS=0 IG=±100µA, VDS=0 VDS=­60V, VGS=0 VGS=±12V, VDS=0 VDS=­10V, ID=­1mA VDS=­10V, ID=­2A ID=­2A, VGS=­10V ID=­2A, VGS=­4V VDS=­20V, f=1MHz VDS=­20V, f=1MHz VDS=­20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=­4A, VGS=0 Conditions Ratings min ­60 ±15 ­100 ±10 ­1.0 2.5 4 0.15 0.2 950 300 75 15 35 115 95 ­1.0 ­1.5 0.2 0.27 ­2.0 typ max Unit V V µA µA V S pF pF pF ns ns ns ns V

Switching Time Test Circuit

No.3765­2/4

2SJ192

No.3765­3/4

2SJ192

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all s e m i c o n d u c t o r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. I n the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, s u c h products must not be expor t e d without obtaining the expor t license from the authorities c o n c e r n e d in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or m e c h a n i c a l , including photocopying and recording, or any information storage or retrieval system, o r otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. I n f o r m a t i o n (including circuit diagrams and circuit parameters) herein is for example only ; it is not g u a r a n t e e d for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of April, 1999. Specifications and information herein are subject to change without notice.
PS No.3765­4/4




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