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Part: 2SJ339
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description:
Company: Sanyo Semiconductor Corporation
Datasheet: Download 2SJ339 datasheet File size : 94 kB
Request For quote: Find where to buy 2SJ339
Datasheet text preview:
Ordering number:ENN6396
P-Channel Silicon MOSFET
2SJ339
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2063A
[2SJ339]
10.0 3.2 4.5 2.8
3.5 7.2 16.0
18.1
5.6
14.0
1.6 1.2 0.75 12 3 2.55
2.4 0.7
2.55
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW10µs, duty cycle1% Tc=25°C
2.55
2.55
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Conditions
2.4
Ratings 60 ±20 25 100 2 40 150 55 to +150
Unit V V A A W W
°C °C
Electrical Characteristics at Ta = 25°C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=60V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=15A ID=15A, VGS=10V ID=15A, VGS=4V 1.0 15 25 30 40 40 55 Conditions Ratings min 60 ±20 100 ±10 2.0 typ max Unit V V µA µA V S m m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2177 No.63961/4
2SJ339
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf VSD VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=25A, VGS=0 Conditions Ratings min typ 3800 1200 300 30 150 450 220 1.0 1.5 max Unit pF pF pF ns ns ns ns V
Switching Time Test Circuit
VDD=--30V VIN 0V --10V VIN PW=10µs D.C.1% P.G 50 ID=--15A RL=2 VOUT
D G
S
--50
ID -- VDS
5.0V VG S =--
--50
ID -- VGS
VDS=--10V 25°C
25°C
--1 --2 --3
. --4
0V
--40
--40
Drain Current, ID A
--30
--30
--20
--3.0V
--20
--10
--10
--2.5V
0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 0 0 --4 --5 --6 IT00662
Drain-to-Source Voltage, VDS V
100
yfs -- ID
IT00661 70
Gate-to-Source Voltage, VGS V
RDS(on) -- VGS
Tc=25°C ID=--15A
Forward Transfer Admittance, | yfs | S
7 5 3 2
VDS=--10V
Static Drain-to-Source On-State Resistance, RDS (on) m
60
Tc=
°C --25
C
50
10 7 5 3 2
75°
25°C
40
30
20
10 0
1.0 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100
0
--2
--4
--6
Tc=---8
75°C
--10
--3.5V
Drain Current, ID A
--4.5V
--12
--14
Drain Current, ID A
IT00663
Gate-to-Source Voltage, VGS V
IT00664
No.63962/4
2SJ339
70
RDS(on) -- Tc
2 10000
Ciss, Coss, Crss -- VDS
f=1MHz
Static Drain-to-Source On-State Resistance, RDS (on) m
60
50
Ciss, Coss, Crss pF
40
A --4 S= VG A, A 15 --10 =-ID S= , VG 5A =--1 ID
7 5 3 2 1000 7 5 3 2 100 7
Ciss
Coss
30
Crss
20
10 0 --80
5 --40 0 40 80 120 160 IT00665 2 0 --5 --10 --15 --20 --25 --30 IT00666
Case Temperature, Tc °C
2 1000 7 5 3 2 100 7 5 3 2 10 3 5 7 --1.0 2 3 5 7 --10 2
Drain-to-Source Voltage, VDS V
SW Time -- ID
VDD=--30V VGS=--10V td(off) Drain Current, ID A
ASO
IDP=--100A
10 µs
Switching Time, SW Time ns
--100 7 5 3 2 --10 7 5 3 2 --1.0 7 5
ID=--25A
1m 10 s
10
0µ
s
tf
tr td(on)
Operation in this area is limited by RDS(on).
DC
10 op
ms
0m tio
era
s
n
Tc=25°C Single pulse
5 7 --1.0 2 3 5 7
3
5
Drain Current, ID A
2.4
IT00667 50
Drain-to-Source Voltage, VDS V
--10
2
3
5
7--100 IT00668
PD -- Ta
Allowable Power Dissipation, PD W
PD -- Tc
Allowable Power Dissipation, PD W
2.0
40
1.6
N
1.2
o
30
he
at
sin
k
20
0.8
0.4
10
0 0 20 40 60 80 100 120 140 160
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta °C
IT00669
Case Temperature, Tc °C
IT00670
No.63963/4
2SJ339
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all s e m i c o n d u c t o r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. I n the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, s u c h products must not be expor t e d without obtaining the expor t license from the authorities c o n c e r n e d in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or m e c h a n i c a l , including photocopying and recording, or any information storage or retrieval system, o r otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. I n f o r m a t i o n (including circuit diagrams and circuit parameters) herein is for example only ; it is not g u a r a n t e e d for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice.
PS No.63964/4
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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