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Part: 2SK2044LS
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description:
Company: Sanyo Semiconductor Corporation
Datasheet: Download 2SK2044LS datasheet File size : 400 kB
Request For quote: Find where to buy 2SK2044LS
Datasheet text preview:
Ordering number : ENN4286B
2SK2044LS
N-Channel Silicon MOSFET
2SK2044LS
Ultrahigh-Speed Switching Applications
Features
· · · ·
Package Dimensions
unit : mm 2078C
[2SK2044LS]
10.0 3.2 4.5 2.8
Low ON-resistance. Ultrahigh-speed switching. High-speed diode (trr=120ns). Micaless package facilitating mounting.
3.5 7.2 16.1 16.0
3.6
0.9
1.2
1.2
0.75 123
14.0
0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Tc=25°C Conditions 2.55 2.55
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS)
Ratings 600 ±30 4 16 2.0 30 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS I GSS VGS(off) Conditions ID=10mA, VGS=0 VDS=480V, VGS=0 VGS=±30V, VDS=0 VDS=10V, ID=1mA Ratings min 600 1.0 ± 100 2.0 3.0 typ max Unit V mA nA V
(Note) Be careful in handling the 2SK2044LS because it has no protection diode between gate and source. Marking : K2044
2.4
0.6
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM TA-3431 / 71599 TH (KT) / 72597 TS (KOTO) / 51193 TH (KOTO) AX-9260 No.4286-1/4
2SK2044LS
Continued from preceding page.
Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Symbol yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD trr Conditions VDS=10V, ID=2A ID=2A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IS=4A, VGS=0 IS=4A, di/dt=100A/µs Ratings min 1.8 typ 3.5 1.8 700 90 30 13 15 160 40 1.5 120 2.4 max Unit S pF pF pF ns ns ns ns V ns
Switching Time Test Circuit
VIN 10V 0V VIN PW=1µs D.C.0.5% VDD=200V ID=2A RL=100
D
VOUT
G S
P.G 50 2SK2044LS
8 7 6 5 4 3
ID -- VDS
6.0V
7
ID -- VGS
VDS=10V
6
Tc= --25°C
25°C
Drain Current, ID -- A
V
=1 GS
0.0
Drain Current, ID -- A
A
5.5V
5
4
75°C
5.0V
3
4.5V
2 1 0 0 4 8 12 16 20 ITR02376
2
4.0V 3.5V
1 0 0 2 4 6 8 10 12 14 16
Drain-to-Source Voltage, VDS -- V
10
yfs -- ID
Gate-to-Source Voltage, VGS -- V
4
ITR02377
RDS(on) -- VGS
Forward Transfer Admittance, yfs -- S
VDS=10V
Tc=25°C
7 5 3 2
2
Static Drain-to-Source On-State Resistance, RDS(on) --
5°C
3
Tc
° -25 =-
C
75 °C
2
1.0 7 5 3 2 5 7 0.1 2 3 5 7 1.0 2 3 5 7
ID=4A 2A 1A
1
0
Drain Current, ID -- A
10 ITR02378
0
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, VGS -- V
ITR02379
No.4286-2/4
2SK2044LS
5
RDS(on) -- Tc
7
ID -- Tc
VDS=10V VGS=10V
Static Drain-to-Source On-State Resistance, RDS(on) --
6 4
Drain Current, ID -- A
5
3
2
= S 0V , V G S=2 2A = VG ID A, =2 ID
V 10
4
3
2
1 1 0 --60 0 --60
--40
--20
0
20
40
60
80
100
120
140
160
--40
--20
0
20
40
60
80
100
120
140
160
Case Temperature, Tc -- °C
5
ITR02380 2 10 7 5
Case Temperature, Tc -- °C
ITR02381
VGS(off) -- Tc
VDS=10V ID=1mA
IS -- VSD
Cutoff Voltage, VGS(off) -- V
4
Source Current, IS -- A
3 2 1.0 7 5 3 2 0.1 7 5 3 2
3
2
1
0 --60
--40
--20
0
20
40
60
80
100
120
140 160 ITR02382 7 5
Tc= 7 25°C 5°C --25° C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Case Temperature, Tc -- °C
5 3 2 1000 7 5 3 2 100 7 5 3 2 10 7 5 0 4 8 12 16 20 24
Diode Forward Voltage, VSD -- V
ITR02383
Ciss, Coss, Crss -- VDS
VGS=0 f=1MHz
SW Time -- ID
VDD=200V VGS=10V P.W.=1µs D.C.0.5%
Switching Time, SW Time -- ns
3 2
Ciss, Coss, Crss -- pF
Ciss
td (off)
100 7 5 3 2
Coss
Crss
tf
tr
10 7 5 28 32 5 7 0.1 2 3 5 7 1.0
td(on)
2 3 5 7 10 ITR02385
Drain-to-Source Voltage, VDS -- V
3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2
ITR02384 2.4
ASO
Drain Current, ID -- A
PD -- Ta
IDP=16A ID=4A
Allowable Power Dissipation, PD -- W
10 1m 10 10 ms 0m s s
<1µs 10 µs
2.0
Drain Current, ID -- A
0µ
s
1.6
No
1.2
he
at
DC
Operation in this area is limited by RDS(on). Tc=25°C Single pulse
3 5 7 10 2 3
sin
k
op
era
tio
n
0.8
0.4
0 5 7 100 2 3 7 1000 ITR02386 5 0 20 40 60 80 100 120 140 160
Drain-to-Source Voltage, VDS -- V
Ambient Temperature, Ta -- °C
ITR02387
No.4286-3/4
2SK2044LS
32
PD -- Tc
Allowable Power Dissipation, PD -- W
30 28 24 20 16 12 8 4 0 0
20
40
60
80
100
120
140
160
Case Temperature, Tc -- °C
ITR02388
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all s e m i c o n d u c t o r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. I n the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, s u c h products must not be expor t e d without obtaining the expor t license from the authorities c o n c e r n e d in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or m e c h a n i c a l , including photocopying and recording, or any information storage or retrieval system, o r otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. I n f o r m a t i o n (including circuit diagrams and circuit parameters) herein is for example only ; it is not g u a r a n t e e d for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice.
PS No.4286-4/4
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