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Part: 2SK2628LS
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description:
Company: Sanyo Semiconductor Corporation
Datasheet: Download 2SK2628LS datasheet File size : 139 kB
Request For quote: Find where to buy 2SK2628LS
Datasheet text preview:
Ordering number : ENN7082
2SK2628LS
N-Channel Silicon MOSFET
2SK2628LS
Ultrahigh-Speed Switching Applications
Preliminary Features
· ·
Package Dimensions
unit : mm 2078C
[2SK2628LS]
10.0 3.2 4.5 2.8
Low ON-resistance. Low Qg.
3 .5 7.2 16.1 16.0
3.6
0.9
1.2
1.2
0.75
14.0
0.7
123
2.4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Tc=25°C Conditions 2.55 2.55
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS)
Ratings 600 ± 30 6 24 2.0 35 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0 VDS=600V, VGS=0 VGS=± 30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=4A ID=2A, VGS=15V Ratings min 600 1.0 ± 100 3.5 2.0 4.0 0.9 1.1 5.5 typ max Unit V mA nA V S
Marking : K2628
0.6
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2501 TS IM TA-3474 No.7082-1/4
2SK2628LS
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol Ciss Coss Crss Qg td(on) tr td(off) tf VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=200V, VGS=10V, ID=6A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IS=6A, VGS=0 Ratings min typ 1050 320 180 30 23 35 90 35 0.85 1.2 max Unit pF pF pF nC ns ns ns ns V
Switching Time Test Circuit
PW=1µs D.C.0.5% VDD=200V ID=4A RL=50
VGS=15V
D
VOUT
G
P.G
RGS=50
2SK2628LS
S
10 9 8
ID -- VDS
15V V 10 8V
12
ID -- VGS
VDS=10V
Tc= --25°C
25°C
10
Drain Current, ID -- A
7 6 5 4 3 2 1 0 0 2 4 6 8
Drain Current, ID -- A
8
75°C
6
7V
4
2
VGS=6V
0 10 12 IT03674 0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V
1.4
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
3.0
IT03675
RDS(on) -- Tc
Tc=25°C
Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
1.3
2.5
4A
1.2
ID=6A
2.0
1.1
1.5
2A
1.0
1.0
0V =1 GS 15V V = A, S =2 ID , VG A =2 ID
0.9
0.5
0.8 0 2 4 6 8 10 12 14 16 18 20
0 --50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
IT03676
Case Temperature, Tc -- °C
IT03677
No.7082-2/4
2SK2628LS
10
yfs -- ID
VDS=10V
3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
IF -- VSD
VGS=0
Forward Transfer Admittance, yfs -- S
7 5 3 2
1.0 7 5 3 2
Forward Current, IF -- A
°C -25 =Tc °C 75 °C 25
75°C 25°C
0.1 0.1
0.01 7 5 3 2 0.001 0 0.3
2
3
5
7 1.0
2
3
5
7
10
2 IT03678 10
--25° C
0.6
Tc=
0.9
1.2
1.5 IT03679
3 2
Ciss, Coss, Crss -- VDS
f=1MHz Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Diode Forward Voltage, VSD -- V
VGS -- Qg
VDS=200V ID=6A
8
Ciss
Ciss, Coss, Crss -- pF
1000 7 5 3 2
6
Coss
Crss
4
100 7 5 0 5 10 15 20 25 30 IT03680
2
0 0 5 10 15 20 25 30 IT03681
Drain-to-Source Voltage, VDS -- V
1000 7
Total Gate Charge, Qg -- nC
5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
SW Time -- ID
ASO
IDP=24A ID=6A <1µs 10 µs 10 0µ s
VDD=200V
Switching Time, SW Time -- ns
5
Drain Current, ID -- A
3 2
td(off)
100 7 5 3 2
tf
Operation in this area is limited by RDS(on).
1m s ms 10 DC 0 op ms era tio n
10
tr
td(on)
2 3 5 7 1.0 2 3 5 7 10 2 3
10 0.1
0.01 1.0
Tc=25°C Single pulse
2 3 5 7 10 2 3 5 7 100 2 3
Drain Current, ID -- A
2.5
IT03682 40
Drain-to-Source Voltage, VDS -- V
5 7 1000 IT03683
PD -- Ta
PD -- Tc
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
35 30 25 20 15 10 5 0
2.0
1.5
1.0
0.5
0 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT03684
Case Temperature, Tc -- °C
IT03685
No.7082-3/4
2SK2628LS
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all s e m i c o n d u c t o r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. I n the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, s u c h products must not be expor t e d without obtaining the expor t license from the authorities c o n c e r n e d in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or m e c h a n i c a l , including photocopying and recording, or any information storage or retrieval system, o r otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. I n f o r m a t i o n (including circuit diagrams and circuit parameters) herein is for example only ; it is not g u a r a n t e e d for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2001. Specifications and information herein are subject to change without notice.
PS No.7082-4/4
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