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Part: 2SK2631
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description:
Company: Sanyo Semiconductor Corporation
Datasheet: Download 2SK2631 datasheet File size : 139 kB
Request For quote: Find where to buy 2SK2631
Datasheet text preview:
Ordering number : ENN6600
2SK2631
N-Channel Silicon MOSFET
2SK2631
Ultrahigh-Speed Switching Applications
Features
· ·
Package Dimensions
unit : mm 2083B
[2SK2631]
6.5 5.0 4
Low ON resistance. Smaller amount of total gate charge.
1 .5
2.3
0.5
0.85 0.7
5.5
7.0
0.8 1.6
1.2
0.6
7.5
0.5
1
2
3
1 : Gate 2 : Drain 3 : Source 4 : Drain
2.3
2.3
SANYO : TP
unit : mm 2092B
[2SK2631]
6.5 5.0 4 2.3
1.5
0.5
5.5
7.0
0.85
0.5
1 0.6
0.8
2
3
2.5
1.2
1.2 0 to 0.2
1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA
2.3
2.3
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
63000 TS IM TA-3024 No.6600-1/5
2SK2631 Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Tc=25°C Conditions Ratings 800 ± 30 1 3 30 1.0 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS I DSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss Qg td(on) tr td(off) tf VSD Conditions ID=1mA, VGS=0 VDS=800V, VGS=0 VGS=± 30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=0.5A ID=0.5A, VGS=15V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=200V, ID=1A, VGS=10V See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=1A, VGS=0 3.5 370 740 7.5 300 85 40 8 12 8 27 16 0.82 1.2 10 Ratings min 800 1.0 ± 100 5.5 typ max Unit V mA nA V ms pF pF pF nC ns ns ns ns V
Marking : K2631
Switching Time Test Circuit
VDD=200V 15V 0V VIN VIN PW=1µs D.C.0.5% ID=0.5A RL=400
D
VOUT
G
2SK2631 P.G RGS 50
S
No.6600-2/5
2SK2631
3.0
ID -- VDS
15V 10V
2.0 1.8 1.6
ID -- VGS
VDS=10V
2.5
Tc= --25°C
Drain Current, ID -- A
Drain Current, ID -- A
8V
2.0
1.4 1.2 1.0 0.8 0.6 0.4
25°C 75°C
1.5
1.0
7V
0.5
VGS=6V
0 5 10 15 20 25 30 35 40 45 50
0.2 0 0 5 10 15 20 IT02480
0
Drain-to-Source Voltage, VDS -- V
16
IT02479
Gate-to-Source Voltage, VGS -- V
18 16 14 12 10 8 6 4 2 0 --75
RDS(on) -- VGS
Tc=25°C
RDS(on) -- Tc
Static Drain-to-Source ON State Resistance, RDS(on) --
14
Static Drain-to-Source ON State Resistance, RDS(on) --
ID=1.0A
12
0.5A
10
0.1A
8
0V =1 S V G =15V A, 0.5 , V GS = ID .5A =0 ID
6 0 2 4 6 8 10 12 14 16 18 20
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
10 7 5 3 2
IT02481 7
Case Temperature, Tc -- °C
IT02482
|yfs| -- ID
VDS=10V
VGS(off) -- Tc
VDS=10V ID=1mA
Forward Transfer Admittance, |yfs| -- S
6
Cutoff Voltage, VGS(off) -- V
5
Tc=
1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.1 2 3 5 7
°C --25 C 25°
2 3 IT02483
4
Drain Current, ID -- A
10 7 5 3 2
IF -- VSD
75°C
3
2
1 0 --50
1.0
--25
0
25
50
75
100
125
150
Case Temperature, Tc -- °C
1000 7 5
IT02484
Ciss, Coss, Crss -- VDS
f=1MHz
VGS=0
Forward Current, IF -- A
Ciss, Coss, Crss -- pF
1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT02485
3 2
Ciss
100 7 5 3 2
Coss
Crss
75° C 25°C
Tc=
--25°
C
10 0 5 10 15 20 25 30 IT02486
Drain-to-Source Voltage, VSD -- V
Drain-to-Source Voltage, VDS -- V
No.6600-3/5
2SK2631
10 9
VGS -- Qg
VDS=200V ID=1A
Switching Time, SW Time -- ns
100 7 5
SW Time -- ID
VDD=200V VGS=15V
Gate-to-Sourse Voltage, VGS -- V
8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 IT02487
3 2
td (off)
tf
td(on)
10 7 5
tr
3 0.1
2
3
5
7
1.0
2 IT02488
Total Gate Charge, Qg -- nC
10 7 5 3
ASO
IDP=3A ID=1A
DC
10
Drain Current, ID -- A
40
PD -- Tc
Drain Current, ID -- A
2 1.0 7 5 3 2 0.1 7 5 3 2
10µs 10 0µ s
Allowable Power Dissipation, PD -- W
35 30 25 20 15 10 5 0
1m
op
ms
s
era
tio
Operation in this area is limited by RDS(on). Tc=25°C Single pulse
2 3 5 7 10 2 3 5 7 100 2
n
0.01 1.0
3
5 7 1000 IT02489
0
20
40
60
80
100
120
140
160
Drain-to-Source Voltage, VDS -- V
1.2
Case Temperature, Tc -- °C
IT02490
PD -- Ta
Allowable Power Dissipation, PD -- W
1.0
0.8
0.6
0.4
0.2
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02491
No.6600-4/5
2SK2631
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all s e m i c o n d u c t o r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. I n the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, s u c h products must not be expor t e d without obtaining the expor t license from the authorities c o n c e r n e d in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or m e c h a n i c a l , including photocopying and recording, or any information storage or retrieval system, o r otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. I n f o r m a t i o n (including circuit diagrams and circuit parameters) herein is for example only ; it is not g u a r a n t e e d for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2000. Specifications and information herein are subject to change without notice.
PS No.6600-5/5
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