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Part: 2SK2632LS
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: 800V/2.5A Ultrahigh-speed Switching Applications
Company: Sanyo Semiconductor Corporation
Datasheet: Download 2SK2632LS datasheet File size : 139 kB
Request For quote: Find where to buy 2SK2632LS
Datasheet text preview:
Ordering number:ENN5531B
N-Channel Silicon MOSFET
2SK2632LS
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Low Qg.
Package Dimensions
unit:mm 2078B
[2SK2632LS]
10.0
3.5
4.5
2.8
3.2
7.2 16.0
16.1
0.9 1.2
14.0
3.6
0.7
0.75 1 2 3
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW10µs, duty cycle1% Tc=25°C
2.55
2.55
Conditions
2.4
0.6
1.2
1 : Gate 2 : Drain 3 : Source SANYO : TO220FI-LS
Ratings 800 ±30 2.5 7.5 2.0 25 150 55 to +150
Unit V V A A W W °C
°C
Electrical Characteristics at Ta = 25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss ID=1mA, VGS=0 VDS=800V, VGS=0 VGS=±30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.3A VGS=15V, ID=1.3A VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz 3.5 0.7 1.4 3.6 550 150 70 4.8 Conditions Ratings min 800 1.0 ±100 5.5 typ max Unit V mA nA V S pF pF pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2000TS (KOTO) TA-3034 No.55311/4
2SK2632LS
Continued from preceding page.
Parameter Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol Qg td(on) tr td(off) tf VSD Conditions VDS=200V, VGS=10V, ID=2.5A See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=2.5A, VGS=0 Ratings min typ 15 15 15 45 23 0.84 1.2 max Unit nC ns ns ns ns V
Marking : K2632
Switching Time Test Circuit
VDD=200V ID=1.3A RL=154
VGS=15V PW=1µs D.C.0.5%
D
VOUT
G
2SK2632LS P.G RGS 50
S
6
ID -- VDS
15V
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
ID -- VGS
Tc=--25°C VDS=10V
5
Drain Current, ID A
10V
Drain Current, ID A
4
8V
3
25°C 75°C
2
7V
1
VGS=6V
0 0 10 20 30 40 50 IT00743
0
5
10
15
20 IT00744
Drain-to-Source Voltage, VDS V
10 9
Gate-to-Source Voltage, VGS V
10 9
RDS(on) -- VGS
Tc=25°C
Static Drain-to-Source On-State Resistance, RDS(on)
RDS(on) -- Tc
Static Drain-to-Source On-State Resistance, RDS(on)
8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20
8 7 6 5 4 3 2 1 0 --50 --25 0 25 50 75 100 125 150
ID =2.5A
1.3A 0.5A
0V =1 GS V 5V A, =1 S 1.3 = VG ID A, 1.3 = ID
Gate-to-Source Voltage, VGS V
IT00745
Case Temperature, Tc °C
IT00746
No.55312/4
2SK2632LS
10
yfs -- ID
VDS=10V
Cutoff Voltage, VGS(off) V
7
VGS(off) -- Tc
VDS=10V ID=1mA
Forward Transfer Admittance, | yfs | S
7 5 3 2
6 5
= Tc
5 --2
°C
4
1.0 7 5 3 2
3 2
C 75°
2
5°C
1 0 --50
0.1 0.1
2
3
5
7
1.0
2
3
5
Drain Current, ID A
1000 7 5
10 IT00747
7
0
50
100
150 IT00748
Case Temperature, Tc °C
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2
SW Time -- ID
VDD=200V VGS=15V
Forward Current, IF A
IF -- VSD
VGS=0
Switching Time, SW Time ns
3 2 100 7 5 3 2
td(off) tf td(on) tr
10 7 5 3 2 1.0 0.1 2 3 5
0.1 7 5 3 2 0.01 7 5 3 2 0.001 0 0.2
75° C 25°C
0.4
7
1.0
2
3
5
Drain Current, ID A
1000 7 5
7 10 IT00749 2
--25 °
0.6
Tc=
C
0.8
1.0
1.2 IT00750
Diode Forward Voltage, VSD V
Ciss, Coss, Crss -- VDS
f=1MHz Ciss
Drain Current, ID A
F.B A S O
IDP=7.5A ID=2.5A
1m s
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
<10µs
Ciss, Coss, Crss pF
3 2
Coss
10
10 10 ms op 0ms era tio n
0µ s
100 7 5 3 2
Crss
DC
Operation in this area is limited by RDS(on). Tc=25°C
2 3
10 0 5 10 15 20 25 30 IT00751
Drain-to-Source Voltage, VDS V
3.0
0.01 Single pulse 23 5 7 10 1.0
5 7 100
2
3
Drain-to-Source Voltage, VDS V
30
5 7 1000 IT00752
PD -- Ta
Allowable Power Dissipation, PD W
PD -- Tc
Allowable Power Dissipation, PD W
2.5
25
2.0
20
1.5
15
1.0
10
0.5
5
0 0 20 40 60 80 100 120 140 160
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta °C
IT00754
Case Temperature, Tc °C
IT00753
No.55313/4
2SK2632LS
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all s e m i c o n d u c t o r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. I n the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, s u c h products must not be expor t e d without obtaining the expor t license from the authorities c o n c e r n e d in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or m e c h a n i c a l , including photocopying and recording, or any information storage or retrieval system, o r otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. I n f o r m a t i o n (including circuit diagrams and circuit parameters) herein is for example only ; it is not g u a r a n t e e d for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2000. Specifications and information herein are subject to change without notice.
PS No.55314/4
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