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Part: 2SK3413LS
Category:
Description: Ultrahigh-speed Switching, Package : TO220FI(LS)
Company: Sanyo Semiconductor Corporation
Datasheet: Download 2SK3413LS datasheet File size : 111 kB
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Datasheet text preview:
Ordering number : ENN7151
2SK3413LS
N-Channel Silicon MOSFET
2SK3413LS
DC / DC Converter Applications
Features
· ·
Package Dimensions
unit : mm 2078C
[2SK3413LS]
10.0 3.2 4.5 2.8
Low ON-resistance. 4V drive.
3.5 7.2 16.1 16.0
3.6
0.9
1.2
1.2
0.75 123
14.0
0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Tc=25°C Conditions 2.55 2.55
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS)
Ratings 60 ±20 25 100 2.0 25 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=12A ID=12A, VGS=10V ID=12A, VGS=4V Ratings min 60 10 ±10 1.0 16 23 25 35 33 49 2.4 typ max Unit V µA µA V S m m
2.4
0.6
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM TA-3297 No.7151-1/4
2SK3413LS
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=25A VDS=10V, VGS=10V, ID=25A VDS=10V, VGS=10V, ID=25A IS=25A, VGS=0 Ratings min typ 1000 280 100 12 72 120 90 34 5 8 0.93 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD=30V 10V 0V VIN ID=12A RL=2.5 VIN
D
PW=10µs D.C.1%
VOUT
G
50
P.G
S
2SK3413LS
25
ID -- VDS
V
4.0
50
ID -- VGS
C --25 ° Tc=
6.0
45 40
8.0V
V
Drain Current, ID -- A
Drain Current, ID -- A
35 30 25 20
15
10.0 V
3.0V
10
5
10
Tc
5 0 2.0 0 0.5 1.0 1.5
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
2.0
2.5
--25
VGS=2.5V
25 °C
°C
=7
5°C
15
3.0
3.5
4.0
75°
4.5 5.0 IT04112 120 140 IT04114
20
Drain-to-Source Voltage, VDS -- V
80
5.0
IT04111
Gate-to-Source Voltage, VGS -- V
80
RDS(on) -- VGS
Static Drain-to-Source On-State Resistance, RDS(on) -- m
70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Tc=25°C ID=12A
RDS(on) -- Tc
70 60 50 40 30 20 10 0 --60
I D=
, VG 12A
4V S=
2A I D=1
=10V , VGS
18
20
--40
--20
0
20
40
60
80
100
Gate-to-Source Voltage, VGS -- V
IT04113
Case Temperature, Tc -- °C
C
No.7151-2/4
25° C
3.5V
VDS=10V
V
2SK3413LS
Forward Transfer Admittance, yfs -- S
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 2 3 5 7 .01 2 3 5 70.1 2 3 5 71.0 2 3 5 7 10 0 2 3 5 7100 IT04115
yfs -- ID
VDS=10V
100 7 5 3 2
IF -- VSD
VGS=0
Forward Current, IF -- A
T
c=
--2
5°
C
75
°C
10 7 5 3 2
Tc= 75°C
0.4
25°C
0.1 7 5 3 2 0.01 0.2 0.6 0.8 1.0 1.2 IT04116
Drain Current, ID -- A
5 3
Diode Forward Voltage, VSD -- V
10000 7 5 3 2
SW Time -- ID
VDD=30V VGS=10V
Ciss, Coss, Crss -- VDS
f=1MHz
Switching Time, SW Time -- ns
2
td (off)
100 7 5 3 2
Ciss, Coss, Crss -- pF
tf
1000 7 5 3 2 100 7 5 3 2 10
Ciss
Coss
Crss
tr
td(on)
10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
0
10
20
30
--25° C
40
°C 25
1.0 7 5 3 2
50
60 IT04118
Drain Current, ID -- A
10 9
IT04117 2 100 7 5
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
ASO
IDP=100A ID=25A
DC
10
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=25A
Drain Current, ID -- A
8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 IT04119
3 2 10 7 5 3 2 1.0 7 5 3 2 0.1
Op
10 m 0m s s
n
10µs 10 0µ s 1m s
era
tio
Operation in this area is limited by RDS(on).
Tc=25°C Single pulse
2 3 5 7 1.0 2 3 5 7 10 2 3
0.1
Total Gate Charge, Qg -- nC
2.5
Drain-to-Source Voltage, VDS -- V
30
5 7 100 IT04120
PD -- Ta
Allowable Power Dissipation, PD -- W
PD -- Tc
Allowable Power Dissipation, PD -- W
2.0
25
20
1.5
No
he
at
sin
15
k
1.0
10
0.5
5
0 0 20 40 60 80 100 120 140 160
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT04121
Case Temperature, Tc -- °C
IT04122
No.7151-3/4
2SK3413LS
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all s e m i c o n d u c t o r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. I n the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, s u c h products must not be expor t e d without obtaining the expor t license from the authorities c o n c e r n e d in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or m e c h a n i c a l , including photocopying and recording, or any information storage or retrieval system, o r otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. I n f o r m a t i o n (including circuit diagrams and circuit parameters) herein is for example only ; it is not g u a r a n t e e d for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2002. Specifications and information herein are subject to change without notice.
PS No.7151-4/4
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