|
Details, datasheet, quote on part number:3LN01S
| |
Datasheet text preview:
Ordering number : ENN6957
3LN01S
N-Channel Silicon MOSFET
3LN01S
Ultrahigh-Speed Switching Applications
Features
· · ·
Package Dimensions
unit : mm 2192
[3LN01S]
0.3 0.75 0.6
Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive.
0.4 0.8 0.4 1.6
3
0~0.1
1
2
0.5 0.5 1.6
0.2
0.1
1 : Gate 2 : Source 3 : Drain
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Conditions
SANYO : SMCP
Ratings 30 ± 10 0.15 0.6 0.15 150 --55 to +150
0.1max
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V Conditions Ratings min 30 10 ± 10 0.4 0.15 0.22 2.9 3.7 6.4 3.7 5.2 12.8 1.3 typ max Unit V µA µA V S
Marking : YA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60801 TS IM TA-1922 No.6957-1/4
3LN01S
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA IS=150mA, VGS=0 Ratings min typ 7.0 5.9 2.3 19 65 155 120 1.58 0.26 0.31 0.87 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD=15V VIN 4V 0V VIN PW=10µs D.C.1% ID=80mA RL=187.5
D
VOUT
G
P.G
50
3LN01S
S
0.16 0.14
ID -- VDS
V 3.5
5V
0.30
ID -- VGS
--25 Ta= °C
VDS=10V
3.0
2.0
2.
V
Drain Current, ID -- A
V
Drain Current, ID -- A
6.0
0.08
0.15
VGS=1.5V
0.06 0.04 0.02 0 0 0.2 0.4 0.6 0.8 1.0 IT00029
0.10
Ta =7
0 0 0.5 1.0
--2 5
°C
0.05
5° C
25°C
1.5 2.0 2.5 3.0 IT00030
Drain-to-Source Voltage, VDS -- V
10
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
10
RDS(on) -- ID
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) --
75
0.10
V
°C
0.20
Static Drain-to-Source On-State Resistance, RDS(on) --
9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10
7
5
ID=80mA 40mA
Ta=75°C
3
25°C --25°C
2
1.0 0.01
2
3
5
7
0.1
2
25°
0.12
4.0
V
0.25
VGS=4V
C
3 5 IT00032
Gate-to-Source Voltage, VGS -- V
IT00031
Drain Current, ID -- A
No.6957-2/4
3LN01S
10
RDS(on) -- ID
VGS=2.5V
100 7
RDS(on) -- ID
VGS=1.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
7
5 3 2
5
Ta=75°C 25°C --25°C
3
10 7 5 3 2
Ta=75°C --25°C 25°C
2
1.0 0.01
2
3
5
7
0.1
2
3
5 IT00033
1.0 0.001
2
3
5
7
0.01
2
3
5 IT00034
Drain Current, ID -- A
7
RDS(on) -- Ta
Drain Current, ID -- A
1.0
yfs -- ID
6
Forward Transfer Admittance, yfs -- S
Static Drain-to-Source On-State Resistance, RDS(on) --
7 5 3 2
VDS=10V
5
4
3
40 4.0 S= I D= A, VG 80m I D=
, mA
=2. V GS
5V
Ta= --
25°C
75°C
V
25°C
0.1 7 5 3 2
2
1 0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
1.0 7 5
0.01 0.01
2
3
5
7
0.1
2
3
5 IT00036
IT00035 1000
IF -- VSD
VGS=0
Drain Current, ID -- A
SW Time -- ID
7
3 2
Switching Time, SW Time -- ns
5 3 2
VDD=15V VGS=4V
Forward Current, IF -- A
75 °C 25 °C
td(off) tf
tr
Ta =
7 5 3 2
--2 5°
C
0.1
100 7 5 3 2
td(on)
0.01 0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2 IT00037
10 0.01
2
3
5
7
0.1
2 IT00038
100 7 5
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Drain Current, ID -- A
10 9
VGS -- Qg
Gate-to-Sourse Voltage, VGS -- V
VDS=10V ID=150mA
8 7 6 5 4 3 2 1
Ciss, Coss, Crss -- pF
3 2
10 7 5 3 2
Ciss
Coss
Crss
1.0 0 2 4 6 8 10 12 14 16 18 20
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain-to-Source Voltage, VDS -- V
IT00039
Total Gate Charge, Qg -- nC
IT00040
No.6957-3/4
3LN01S
0.20
PD -- Ta
Allowable Power Dissipation, PD -- W
0.15
0.10
0.05
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT01961
Note on usage : Since the 3LN01S is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all s e m i c o n d u c t o r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. I n the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, s u c h products must not be expor t e d without obtaining the expor t license from the authorities c o n c e r n e d in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or m e c h a n i c a l , including photocopying and recording, or any information storage or retrieval system, o r otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. I n f o r m a t i o n (including circuit diagrams and circuit parameters) herein is for example only ; it is not g u a r a n t e e d for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2001. Specifications and information herein are subject to change without notice.
PS No.6957-4/4
|
|
