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Part: 5HN01M
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description:
Company: Sanyo Semiconductor Corporation
Datasheet: Download 5HN01M datasheet File size : 153 kB
Request For quote: Find where to buy 5HN01M
Datasheet text preview:
Ordering number : ENN6136
5HN01M
N-Channel Silicon MOSFET
5HN01M
Ultrahigh-Speed Switching Applications
Features
· · ·
Package Dimensions
unit : mm 2158
[5HN01M]
Low ON resistance. Ultrahigh-speed switching. 4V drive.
0.425
0.15
3
2.1 1.250 0 to 0.1
0.425
12 0.65 0.65 2.0
0.3 0.9
0.6
0.2
0.3
1 : Gate 2 : Source 3 : Drain SANYO : MCP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Conditions
Ratings 50 ± 20 0.1 0.4 0.15 150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS I DSS I GSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=50V, VGS=0 VGS=± 16V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=50mA ID=50mA, VGS=10V ID=30mA, VGS=4V Ratings min 50 10 ± 10 1 85 120 5.8 7.5 7.5 10.5 2.4 typ max Unit V µA µA V mS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90100 TS IM TA-2044 No.6136-1/4
5HN01M
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA IS=100mA, VGS=0 Ratings min typ 6.2 4.4 1.5 10 11 105 75 1.40 0.21 0.34 0.85 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Marking : YC
Switching Time Test Circuit
VIN VIN VDD=25V ID=50mA RL=500 VOUT
10V 0V
PW=10µs D.C.1%
D G
5HN01M P.G 50
S
0.10
ID -- VDS
8.0 V
0.20 0.18
ID -- VGS
VDS=10V
6.
0V
25°C Ta= -0 1 2 3
0.08
0.16
Drain Current, ID -- A
Drain Current, ID -- A
.0V
0.14 0.12 0.10 0.08 0.06 0.04
0.06
0.04
10
2.5V
0.02
VGS=2.0V
0 0 0.2 0.4 0.6 0.8 1.0 IT00042
0.02 0 4 5 IT00043
Drain-to-Source Voltage, VDS -- V
12
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
100 7
RDS(on) -- ID
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) --
75°C
25°
VGS=10V
2
4.
0V
3.0
V
Static Drain-to-Source On-State Resistance, RDS(on) --
11 10 9
5 3 2
50mA
8
10 7 5 3 2
ID=30mA
7 6 5 4 0 1 2 3 4 5 6 7 8 9 10
Ta=75°C 25°C --25°C
1.0 0.01
2
3
5
7
C
0.1
3 IT00045
Gate-to-Source Voltage, VGS -- V
IT00044
Drain Current, ID -- A
No.6136-2/4
5HN01M
100 7
RDS(on) -- ID
VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) --
14
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) --
5 3 2
12
10
10 7 5 3 2
Ta=75°C 25°C --25°C
8
6
30m I D= 50m I D=
VG A,
4V S= 10V S= , VG A
4
2 0 --60
1.0 0.01
2
3
5
7
0.1
2
3
--40
--20
0
20
40
60
80
100
120
140
160
Drain Current, ID -- A
1.0
IT00046 3 2
yfs -- ID
Ambient Temperature, Ta -- °C
IT00047
IF -- VSD
VGS=0
Forward Transfer Admittance, yfs -- S
7 5 3 2
VDS=10V
Forward Current, IF -- A
0.1 7 5
Ta=
0.1 7 5 3 2
C --25°
75°C
25°C
3
°C
0.5 0.6
0.01 0.01
2
3
5
7
0.1
2
3
0.01 0.4
Ta= 7 5
0.7
--25°C
0.8 0.9
2
25°C
1.0
1.1
1.2
Drain Current, ID -- A
1000 7 5
IT00048 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1
SW Time -- ID
Diode Forward Voltage, VSD -- V
IT00049
Ciss, Coss, Crss -- VDS
f=1MHz
VDD=25V VGS=10V td(off) tf tr td(on) Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7
Ciss Coss
Crss
Drain Current, ID -- A
10 9
0.1 IT00050 0.20
0
5
10
15
20
25
30
35
40
45
50
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
IT00051
PD -- Ta
8 7 6 5 4 3 2 1 0 0 0.3 0.6 0.9 1.2 1.5 IT00052
Allowable Power Dissipation, PD -- W
Gate-to-Sourse Voltage, VGS -- V
VDS=10V ID=0.1A
0.15
0.10
0.05
0 0 20 40 60 80 100 120 140 160
Total Gate Charge, Qg -- nC
Ambient Temperature, Ta -- °C
IT02381
No.6136-3/4
5HN01M
Note on usage : Since the 5HN01M is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all s e m i c o n d u c t o r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. I n the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, s u c h products must not be expor t e d without obtaining the expor t license from the authorities c o n c e r n e d in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or m e c h a n i c a l , including photocopying and recording, or any information storage or retrieval system, o r otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. I n f o r m a t i o n (including circuit diagrams and circuit parameters) herein is for example only ; it is not g u a r a n t e e d for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2000. Specifications and information herein are subject to change without notice.
PS No.6136-4/4
Others parts begin by 5h
5H-1
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