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Part: 5LN02N
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description:
Company: Sanyo Semiconductor Corporation
Datasheet: Download 5LN02N datasheet File size : 60 kB
Request For quote: Find where to buy 5LN02N
Datasheet text preview:
Ordering number:ENN6538
N-Channel Silicon MOSFET
5LN02N
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive.
Package Dimensions
unit:mm 2178
[5LN02N]
5.0 4.0 4.0
0.45 0.5
0.6 2.0
5.0
0.45
0.44
1
2
3
14.0
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Conditions
1.3
1.3
1 : Source 2 : Drain 3 : Gate SANYO : NP
Ratings 50 ±10 0.2 0.8 0.4 150 55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta = 25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=50V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=100mA ID=100mA, VGS=4V ID=50mA, VGS=2.5V ID=10mA, VGS=1.5V 0.4 0.34 0.49 1.9 2.2 3.2 2.4 3 6.4 Conditions Ratings min 50 10 ±10 1.3 typ max Unit V µA µA V S
Marking : YE
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2000TS (KOTO) TA-2940 No.6538-1/4
5LN02N
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=200mA VDS=10V, VGS=10V, ID=200mA VDS=10V, VGS=10V, ID=200mA IS=200mA, VGS=0 Conditions Ratings min typ 25 12 4.5 25 75 350 170 2.18 0.28 0.45 0.83 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
4V 0V VIN VIN VDD=25V ID=100mA RL=250
PW=10µs D.C.1%
D G
VOUT
5LN02N P.G 50
S
0.20 0.18 0.16
ID -- VDS
3.5V 4.0V 3.0V
VGS=1.5V
0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0
ID -- VGS
5°C
75°C
VDS=10V
Drain Current, ID A
0.12 0.10 0.08 0.06 0.04 0.02 0 0 0.1 0.2 0.3
2.0
V
0.14
Drain Current, ID A
6.0V
2.5V
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
Ta= -2
25°C
2.0
2.5 IT00275
Drain-to-Source Voltage, VDS V
6
IT00274
Gate-to-Source Voltage, VGS V
10
RDS(on) -- VGS
Ta=25°C
RDS(on) -- ID
VGS=4V
Static Drain-to-Source On-State Resistance, RDS (on)
ID=100mA
4
50mA
Static Drain-to-Source On-State Resistance, RDS (on)
5
7
5
3
3
Ta=75°C 25°C --25°C
2
2
1
0 0 1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS V
1.0 0.01
2
3
5
7
IT00276
Drain Current, ID A
0.1
2
3
5 IT00277
No.6538-2/4
5LN02N
10
RDS(on) -- ID
VGS=2.5V
10
RDS(on) -- ID
VGS=1.5V
Static Drain-to-Source On-State Resistance, RDS (on)
5
Static Drain-to-Source On-State Resistance, RDS (on)
7
7
5
Ta=75°C
3
3
Ta=75°C 25°C
25°C --25°C
2
2
--25°C
1.0 0.01
2
3
5
7
Drain Current, ID A
0.1
2
3
5 IT00278
1.0 0.001
2
3
5
7
Drain Current, ID A
0.01
2
3
5 IT00279
4.5 4.0
RDS(on) -- Ta
Forward Transfer Admittance, | yfs | S
1.0
yfs -- ID
VDS=10V
Static Drain-to-Source On-State Resistance, RDS (on)
7
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --60
50m I D=
I D=
A,
=2. V GS
A,
5V
0V
5
= Ta
3
--2
C 5°
25 °C
m 100
=4. V GS
75
°C
2
--40
--20
0
20
40
60
80
100
120
140
160
0.1 0.01
2
3
5
7
0.1
2
3
5
Ambient Temperature, Ta °C
1.0 7 5
IT00280 1000
Drain Current, ID A
7 1.0 IT00281
IF -- VSD
VGS = 0
SW Time -- ID
VDD=25V VGS=4V td(off) tf tr
7
3 2
Switching Time, SW Time ns
5 3 2
Forward Current, IF A
0.1 7 5 3
100 7 5 3 2
td(on)
2 0.01 0 0.2 0.4
Ta=75° C 25°C --25°C
0.6
0.8
1.0
1.2
1.4 IT00282
10 0.01
2
3
5
7
Diode Forward Voltage, VSD V
100 7 5
Drain Current, ID A
0.1
2
3
IT00283
Ciss, Coss, Crss -- VDS
f=1MHz
10 9
VGS -- Qg
VDS=10V ID=200mA
Gate-to-Source Voltage, VGS V
8 7 6 5 4 3 2 1
Ciss, Coss, Crss pF
3 2
Ciss
10 7 5 3 2
Coss
Crss
1.0 0 5 10 15 20 25 30 35 40 45 50
0 0 0.5 1.0 1.5 2.0 2.5 IT00285
Drain-to-Source Voltage, VDS V
IT00284
Total Gate Charge, Qg nC
No.6538-3/4
5LN02N
0.5
PD -- Ta
Allowable Power Dissipation, PD W
0.4
0.3
0.2
0.1
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta °C
IT01996
Note on usage : Since the 5LN02N is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all s e m i c o n d u c t o r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. I n the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, s u c h products must not be expor t e d without obtaining the expor t license from the authorities c o n c e r n e d in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or m e c h a n i c a l , including photocopying and recording, or any information storage or retrieval system, o r otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. I n f o r m a t i o n (including circuit diagrams and circuit parameters) herein is for example only ; it is not g u a r a n t e e d for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of December, 2000. Specifications and information herein are subject to change without notice.
PS No.6538-4/4
Others parts begin by 5l
5L-1
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