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Part: 5LP01SP

Category:
 Discrete
   -> Transistors
     -> FETs (Field Effect Transistors)
       -> MOSFETs

Description:

Company: Sanyo Semiconductor Corporation

Datasheet: Download 5LP01SP datasheet     File size : 60 kB

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Datasheet text preview:
Ordering number : ENN6621

5LP01SP
P-Channel Silicon MOSFET

5LP01SP
Ultrahigh-Speed Switching Applications
Features
· · ·

Package Dimensions
unit : mm 2180
[5LP01SP]
4.0
3.0

Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.

2.2

0.4 0.5
0.6

1.8 15.0

0.4

0.4

12 1.3
0.7

3
1.3

1 : Source 2 : Drain 3 : Gate SANYO : SPA

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Conditions

3.0 3.8nom

0.7

Ratings - 50 ±10 --0.07 --0.28 0.25 150 --55 to +150

Unit V V A A W °C °C

Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS I GSS VGS(off) Conditions ID=--1mA, VGS=0 VDS=- 50V, VGS=0 VGS=± 8V, VDS=0 VDS=- 10V, ID=- 100µA Ratings min --50 10 ±10 - 0.4 --1.4 typ max Unit V µA µA V

Marking : XB

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91400 TS IM TA-1953 No.6621-1/4

5LP01SP
Continued from preceding page.
Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, ID=--40mA ID=--40mA, VGS=--4V ID=--20mA, VGS=--2.5V ID=--5mA, VGS=- 1.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=- 70mA VDS=--10V, VGS=--10V, ID=- 70mA VDS=--10V, VGS=--10V, ID=- 70mA IS=--70mA, VGS=0 Ratings min 70 typ 100 18 20 30 7.4 4.2 1.3 20 35 160 150 1.40 0.16 0.23 0.85 1.2 23 28 60 max Unit mS pF pF pF ns ns ns ns nC nC nC V

Switching Time Test Circuit
0V --4V VIN VIN VDD= --25V ID= --40mA RL=625

PW=10µs D.C.1%

D G

VOUT

5LP01SP P.G 50

S

--0.07

ID -- VDS
0V
V

--0.14

ID -- VGS
Ta= -25°C

--6 .

0V

--0.06

--2

--3

.5

.0

V
--0.12

VDS= --10V
25°C

--4 .

Drain Current, ID -- A

.5V

--2.0V
Drain Current, ID -- A

--0.05

--3

--0.10

--0.03

--0.06

--0.02

VGS= --1.5V

--0.04

--0.01 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0

--0.02 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0

Drain-to-Source Voltage, VDS -- V
40

IT00090

RDS(on) -- VGS

Gate-to-Source Voltage, VGS -- V
100

75°

--0.04

--0.08

C

IT00091

RDS(on) -- ID

Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) --

VGS= --4V
7

Static Drain-to-Source On-State Resistance, RDS(on) --

35

30

5

25

3

ID=20mA
20

40mA

Ta=75°C
2

25°C --25°C

15

10 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10

10 --0.01

2

3

5

7

--0.1

2

3

Gate-to-Source Voltage, VGS -- V

IT00092

Drain Current, ID -- A

IT00093

No.6621-2/4

5LP01SP
1000 7

RDS(on) -- ID
VGS= --2.5V

100

RDS(on) -- ID
VGS= --1.5V

Static Drain-to-Source On-State Resistance, RDS(on) --

5 3 2

Static Drain-to-Source On-State Resistance, RDS(on) --

7

5

100 7 5 3 2

3

Ta=75°C 25°C --25°C

25°C Ta=75°C --25°C
2 3 5 7 --0.1 2 3

2

10 --0.01

10 --0.001

2

3

5

7

--0.01

2

3

Drain Current, ID -- A
40

IT00094 1.0

Drain Current, ID -- A

RDS(on) -- Ta

yfs -- ID

IT00095

Forward Transfer Admittance, yfs -- S

7 5 3 2

VDS= --10V

Static Drain-to-Source On-State Resistance, RDS(on) --

35

30

25

20

m -20 V =A, ID 0m --4 = ID

V A,

-2. =GS

5V

-4. =GS

0V

0.1 7 5 3 2

5°C Ta= --2

75°C

25°C

15

10 --60

--40

--20

0

20

40

60

80

100

120

140

160

Ambient Temperature, Ta -- °C
3 2

0.01 --0.01

2

3

5

7

--0.1

2

3

IT00096 1000

IF -- VSD
VGS=0

Drain Current, ID -- A

IT00097

SW Time -- ID

7

VDD= --25V VGS = --4V tf td(off)

Switching Time, SW Time -- ns

5 3 2

Forward Current, IF -- A

--0.1 7 5

100 7 5 3 2

3

tr td(on)

25°C

--25°C

2

Ta=7 5°C

--0.01 --0.5

--0.6

--0.7

--0.8

--0.9

--1.0

--1.1

--1.2 IT00098

10 --0.01

2

3

5

7

Diode Forward Voltage, VSD -- V
100 7 5 3 2

Ciss, Coss, Crss -- VDS
f=1MHz

Drain Current, ID -- A
--10 --9

--0.1 IT00099

VGS -- Qg

Gate-to-Source Voltage, VGS -- V

VDS= --10V ID= --70mA

--8 --7 --6 --5 --4 --3 --2 --1 0

Ciss, Coss, Crss -- pF

10 7 5 3 2 1.0 7 5 3 2 0.1 0 --5 --10 --15 --20 --25 --30

Ciss Coss

Crss

--35

--40

--45

--50

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Drain-to-Source Voltage, VDS -- V

IT00100

Total Gate Charge, Qg -- nC

IT00101

No.6621-3/4

5LP01SP
0.30

PD -- Ta

Allowable Power Dissipation, PD -- W

0.25

0.20

0.15

0.10

0.05

0 0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT02382

Note on usage : Since the 5LP01SP is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all s e m i c o n d u c t o r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. I n the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, s u c h products must not be expor t e d without obtaining the expor t license from the authorities c o n c e r n e d in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or m e c h a n i c a l , including photocopying and recording, or any information storage or retrieval system, o r otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. I n f o r m a t i o n (including circuit diagrams and circuit parameters) herein is for example only ; it is not g u a r a n t e e d for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2000. Specifications and information herein are subject to change without notice.
PS No.6621-4/4




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