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Details, datasheet, quote on part number:FTD1002
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Datasheet text preview:
FTD1002
P- Channel Silicon MOS FET
Features · Low ON-state resistance. · 4V drive. · Mount height of 1.1mm. · Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage Marking : D1002 Switching Time Test Circuit
VIN 0V VDD=--15V D2 ID=--2A RL=7.5 D VOUT 6.4 4.5 S2 S2 G2 0.65 8765
TENTATIVE
unit VDSS VGSS ID IDP PD PT Tch Tstg --30 ±20 --2 --15 0.8 1.0 150 --55 to +150 min V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) 1 RDS(on) 2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA VDS=--30V VGS=±16V VDS=--10V VDS=--10V ID=--2A ID=--1A VDS=--10V VDS=--10V VDS=--10V , VGS=0 , VGS=0 , VDS=0 , ID=--1mA , ID=--2A , VGS=--10V , VGS=--4V , f=1MHz , f=1MHz , f=1MHz --30 --100 ±10 --2.5 3.7 90 170 400 230 110 10 30 55 50 14 1.5 4.7 --1.0 115 240 V V A A W W °C °C typ max unit V µA µA V S m m pF pF pF ns ns ns ns nC nC nC V
PW10µS, dutycycle1% Mounted on ceramic board (1000mm2 ! 0.8mm) 1unit Mounted on ceramic board (1000mm2 ! 0.8mm)
--1 2.5
See Specified Test Circuit
VDS=--10V, VGS=--10V, ID=--2A IS=--2A , VGS=0 Case Outline
TSSOP8(unit:mm)
3.0
--1.5
Electrical Connection
--10V
VIN PW=10µS D.C.1%
0.95
0.425
G 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2
0.25
0.95
P.G
50 S
FTD1002
1234
0.125
0.1
D1
S1
S1
G1
Specifications and information herein are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
990128TM2fXHD
1.0
0.50
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