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Details, datasheet, quote on part number:FTD1003
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Datasheet text preview:
Ordering number:ENN6428
P-Channel Silicon MOSFET
FTD1003
Load Switching Applications
Features
· Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting.
Package Dimensions
unit:mm 2155A
[FTD1003]
0.65 8
0.95
3.0 5
0.425
4.5 6.4
0.5
1 0.25
4
(0.95)
0.125
Absolute Maximum Ratings at Ta = 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10µs, duty cycle1% Conditions Ratings 20 ±10 1.4 5.6 0.8 1.0 150 55 to +150 Unit V V A A W W
Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm)
0.1
Specifications
1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
1.0
°C °C
Electrical Characteristics at Ta = 25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.4A ID=1.4A, VGS=4V ID=0.7A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.4 2.1 3 235 340 180 90 43 315 480 Conditions Ratings min 20 10 ±10 1.4 typ max Unit V µA µA V S m m pF pF pF
Marking : D1003
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2500 No.64281/4
FTD1003
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD IS=1.4A, VGS=0 VDS=10V, VGS=10V, ID=1.4A Conditions See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit Ratings min typ 10 380 280 310 9.5 1 1.5 0.83 1.2 max Unit ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD=--10V 0V --4V VIN VIN
Electrical Connection
D2 S2 S2 G2
ID=--1.4A RL=7.1
PW=10µs D.C.1%
D G
VOUT
P.G
50
S
FTD1003
D1 S1 S1 G1
--1.8 --1.6 --1.4
ID -- VDS
--6.0V
--3.0
ID -- VGS
VDS=--10V
25°
Drain Current, ID A
--4 .0 --3 V .0V --2 .5 V
--10 .0
--1.0 --0.8 --0.6 --0.4 --0.2 0 0
V
--1.5
--1.0
VGS=--1.5V
--0.5
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 IT00966
Drain-to-Source Voltage, VDS V
1000
IT00965
Gate-to-Source Voltage, VGS V
600
RDS(on) -- VGS
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) m
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) m
900 800 700 600
500
400
--1.4A
500 400 300 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
--0 I D=
.
=--2 VGS 7A,
.5V
300
ID=--0.7A
-1.4A I D=-
=--4. , VGS
0V
200
100
0 --60
--40
--20
Gate-to-Source Voltage, VGS V
IT00967
Ambient Temperature, Ta °C
0
20
40
60
80
75°
100 120
--1.2
--2.0
C
--8.0V
Ta= --
--2.0V
Drain Current, ID A
25°
C
--2.5
C
140 160 IT00968
No.6428-2/4
FTD1003
10
yfs -- ID
VDS=--10V
Forward Transfer Admittance, | yfs | S
7 5
--10 7 5 3 2
IF -- VSD
VGS = 0
Forward Current, IF A
3 2
1.0 7 5 3 2 0.1 --0.01
= Ta
--
° 25
C
25°
C
--1.0 7 5 3 2 --0.1 7 5 3 2
75
°C
Ta= 75°C 25°C
--0.5 --0.6
2
3
5
7 --0.1
2
3
5
Drain Current, ID A
7 --1.0
2
3
7 --10 IT00969
5
--0.001 --0.2 --0.3 --0.4
--25° C
--0.7 --0.8
--0.01 7 5 3 2
--0.9
--1.0
--1.1
--1.2
Diode Forward Voltage, VSD V
1000 7
IT00970
100 7
SW Time -- ID
VDD=--10V VGS=--4V tf
td (off)
Ciss, Coss, Crss -- VDS
f=1MHz
Switching Time, SW Time ns
5 3 2
tr Ciss, Coss, Crss pF
5 3 2
Ciss Coss Crss
10 7 5 3 2
td(on)
100 7 5 3 2
1.0 --0.1
10 2 3 5 7
Drain Current, ID A
--1.0
2
3 IT00971 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
--20
Drain-to-Source Voltage, VDS V
IT00972
--10 --9
VGS -- Qg
VDS=--10V ID=--1.4A Drain Current, ID A
ASO
IDP=--5.6A
10
Gate-to-Source Voltage, VGS V
--8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 10
ID=--1.4A
DC
1m s ms
100µs
10
op
0m
s
Operation inthis area is limited by RDS(on). Ta= 25°C Single pulse 1 unit
era
tio
n
Total Gate Charge, Qg nC
1.2
--0.01 Mounted on 23 --0.1
a ceramic board (1000mm2×0.8mm)
5 7 --1.0 2 3 5 7 --10 2 3 5 IT00974
IT00973
Drain-to-Source Voltage, VDS V
Mounted on a ceramic board (1000mm2×0.8mm)
Allowable Power Dissipation (FET1), PD W
PD -- Ta
1.0
PD(FET1) -- PD(FET2)
M ou
Allowable Power Dissipation, PD W
1.0
0.8
nte
do
0.8
To
na
tal
ce
Di
0.6
ram
0.6
1u
ss
ic
ip
bo
nit
ati
ard
on
(1
0.4
00
0m
0.4
m2 ×0
.8m
0.2
0.2
m)
0 0 20
0 0 0.2 0.4 0.6 0.8 1.0
Ambient Temperature, Ta °C
40
60
80
100
120
140
160
IT00975
Allowable Power Dissipation (FET2), PD W IT00976
No.6428-3/4
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