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Details, datasheet, quote on part number:FTD1011
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Datasheet text preview:
Ordering number : ENN6593
FTD1011
P-Channel Silicon MOSFET
FTD1011
Ultrahigh-Speed Switching Applications
Features
· · · ·
Package Dimensions
unit : mm 2155A
[FTD1011]
0.65 0.425
Low ON-resistance. 2.5V drive. Mount height of 1.1mm. Composite type, facilitating high-density mounting.
8
5
0.5 4.5 6.4
0 .9 5
3.0
1
0.25
4
(0.95)
0.125
1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10µs, duty cycle1% Mounted on a ceramic board (1000mm2!0.8mm)1unit Mounted on a ceramic board (1000mm2!0.8mm) Conditions Ratings - 20 ±10 --3 - 15 0.8 1.0 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Sourse on-State Resistance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0 VDS=- 20V, VGS=0 VGS=± 8V, VDS=0 VDS=- 10V, ID=--1mA VDS=- 10V, ID=- 3A ID=--3A, VGS=- 4V ID=--2A, VGS=- 2.5V Ratings min --20 --1 ±10 --0.4 6 8.8 50 68 65 96 --1.4 typ max Unit V µA µA V S m m
Marking : D1011
0.1
Specifications
1.0
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71400 TS IM TA-2725 No.6593-1/4
FTD1011
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=- 10V, ID=--3A VDS=--10V, VGS=- 10V, ID=--3A VDS=--10V, VGS=- 10V, ID=--3A IS=--3A, VGS=0 Ratings min typ 1000 190 120 13 110 65 75 23 1.6 2.5 --0.8 --1.5 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD= --10V VIN 0V --4V VIN PW=10µs D.C.1% ID= --3A RL=3.3
Electrical Connection
D2 S2 S2 G2
D
VOUT
G
P.G
50
S
D1 S1 S1 G1
--6
ID -- VDS
V --3.0V --2.5V
--6
ID -- VGS
VDS=10V
Drain Current, ID -- A
--2 .
--5
0V
--5
--4
Drain Current, ID -- A
--4
--4.0
--3
VGS= --1.5V
--3
--2
--2
25
°C
°C
--1 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Ta =
--25
--1.4
75
°C
--1.6
--1.8
--2.0
Drain-to-Source Voltage, VDS -- V
160
IT02298
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
160
IT02299
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
140 120 100 80 60 40 20 0 0 --2 --4 --6 --8 --10 IT02300
140 120 100 80 60 40 20 0 --60
ID= --2A --3A
.5V = --2 A, VGS --2 I D= --4.0V V S= --3A, G I D=
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
IT02301
No.6593-2/4
FTD1011
2
yfs -- ID
VDS=10V
Forward Transfer Admittance, yfs -- S
10 7 5 3 2 1.0 7 5 3 2 0.1 --0.01
--10 7 5 3 2
IF -- VSD
VGS=0
25
°C
= Ta
--2
C 5°
Foward Current, IF -- A
--1.0 7 5 3 2 --0.1 7 5 3 2
°C 75
--0.01 7 5 3 2
Ta= 75
°C
C 25°
--0.4
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10 IT02302
--0.001 --0.2
--0.3
--2 5°
--0.6
C
--0.5
--0.7
--0.8
--0.9
--1.0
Drain Current, ID -- A
3 2
Ciss, Coss, Crss -- VDS
f=1MHz
Gate-to-Source Voltage, VGS -- V
Diode Forward Voltage, VSD -- V
--10 --9 --8 --7 --6 --5 --4 --3 --2 --1 0 0 2 4 6 8 10 12 14 16 18 20
IT02303
VGS -- Qg
VDS= --10V ID= --3A
Ciss, Coss, Crss -- pF
1000 7 5 3 2
Ciss
Coss
Crss
100 7 5 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
22
24
Drain-to-Source Voltage, VDS -- V
5 3
IT02304 3 2 --10 7 5
Total Gate Charge, Qg -- nC
IT02305
SW Time -- ID
VDD= --10V VGS= --4V
Drain Current, ID -- A
ASO
IDP= --15A <10µs
1 10 ms ms
0m s
Switching Time, SW Time -- ns
2
100 7 5 3 2
td(off) tf
3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
ID= --3A
10
DC
op
era
tio
n
tr td(on)
Operation in this area is limited by RDS(on) Ta=25°C Single pulse Mounted on a ceramic board(1000mm2!0.8mm)1unit
2 3 5 7 --0.1 2 3 5 7--1.0 2 3 5 7 --10 23
10 7 --0.1 2 3 5 7 --1.0 2 3 5 7
--0.01 --0.01
Drain Current, ID -- A
1.2
IT02306 1.0
Drain-to-Source Voltage, VDS -- V
IT02307
PD -- Ta
PD(FET1) -- PD(FET2)
ou
Allowable Power Dissipation, PD(FET1) -- W
Allowable Power Dissipation, PD -- W
1.0
M
0.8
nte
do
0.8
na
ce
0.6
To t
1u nit
0.6
ram
ic
al
di
bo
ss
ard
ip
(1
ati
0.4
on
0.4
00
0m
m2 !0
.8m
0.2
0.2
m)
0 0
Mounted on a ceramic board(1000mm2!0.8mm)
20 40 60 80 100 120 140 160
0 0 0.2 0.4 0.6 0.8 1.0 IT02309
Ambient Temperature, Ta -- °C
IT02308
Allowable Power Dissipation, PD(FET2) -- W
No.6593-3/4
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