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Part: FTD1012
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description:
Company: Sanyo Semiconductor Corporation
Datasheet: Download FTD1012 datasheet File size : 178 kB
Request For quote: Find where to buy FTD1012
Datasheet text preview:
Ordering number : ENN7000
FTD1012
P-Channel Silicon MOSFET
FTD1012
Load Switching Applications
Features
· · · ·
Package Dimensions
unit : mm 2155A
[FTD1012]
0.65
8
5
0.5 4.5 6.4
0.95
Low ON-resistance. 4V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting.
3.0
0.425
1
0.25
4
(0.95)
1.0
1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 0.125 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10µs, duty cycle1% Conditions
0.1
Ratings
Unit
--30
± 20 --3 - 15 0.8 1.0 150 --55 to +150 Mounted on a ceramic board (1000mm 2!0.8mm) 1unit Mounted on a ceramic board (1000mm2!0.8mm)
V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=- 30V, VGS=0 VGS=± 16V, VDS=0 VDS=- 10V, ID=--1mA VDS=- 10V, ID=--3A Ratings min --30 --1 ± 10 --1.0 3.8 5.5 --2.4 typ max Unit V µA µA V S
Marking : D1012
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71001 TS IM TA-2300 No.7000-1/4
FTD1012
Continued from preceding page.
Parameter Symbol RDS(on) 1 RDS(on) 2 RDS(on) 3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--3A, VGS=--10V ID=--2A, VGS=--4.5V ID=--2A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=- 3A VDS=--10V, VGS=--10V, ID=- 3A VDS=--10V, VGS=--10V, ID=- 3A IS=--3A, VGS=0 Ratings min typ 50 80 85 1000 250 160 10 30 55 50 19 2 4 --1.0 --1.5 max 65 110 120 Unit m m m pF pF pF ns ns ns ns nC nC nC V
Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage
Switching Time Test Circuit
VIN 0V --10V VIN PW=10µs D.C.1%
VDD= --15V
Electrical Connection
D2 S2 S2 G2
ID= --3A RL=5
D
VOUT
G
FTD1012
P.G
50
S
D1 S1
--6
S1 G1
ID -- VDS
V --8.0V --6.0V
--8
ID -- VGS
VDS= --10V
5V
0V
--4 .
--5
--4 .
--7 --6 --5 --4 --3 --2 --1
Drain Current, ID -- A
--3
--10. 0
--4
.0 --3
V
Drain Current, ID -- A
--2
VGS= --2.5V
Ta= 25 75 °C °C
0 --0.5 --1.0 --1.5 --2.0
--1
0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0 --2.5 --3.0 --3.5
Drain-to-Source Voltage, VDS -- V
140
IT02537
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
140
--25
°C
IT02538
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
120
120
100
ID= --2A
80
--3A
100
80
4.0V = -VGS , .5V --2A = --4 I D= VGS , --2A I D=
A I D= --3 --10. , V GS= 0V
60
60
40
40
20 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
20 0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT02539
Ambient Temperature, Ta -- °C
IT02540
No.7000-2/4
FTD1012
Forward Transfer Admittance, yfs -- S
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT02541 --10
yfs -- ID
VDS= --10V
--10 7 5 3 2
IF -- VSD
VGS=0
Forward Current, IF -- A
C 25°
--1.0 7 5 3 2 --0.1 7 5 3 2
Ta=
°C --25 C 75°
--0.01 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 IT02542
--0.001
10000 7 5 3 2
Ciss, Coss, Crss -- VDS
f=1MHz
Drain Current, ID -- A
Diode Forward Voltage, VSD -- V
--9
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --3A
--8 --7 --6 --5 --4 --3 --2 --1 0
Ciss, Coss, Crss -- pF
1000 7 5 3 2 100 7 5 3 2 10 0 --5 --10 --15 --20
Ciss
Coss Crss
--25
--30 IT02543 3 2 --10 7 5
Ta=7 5°C 25°C --25°C
VGS -- Qg
0
5
10
15
20 IT02544
Drain-to-Source Voltage, VDS -- V
1000 7 5
Total Gate Charge, Qg -- nC
SW Time -- ID
ASO
IDP= --15A <10µs 1m s 100µs 10 m s
VDD= --15V VGS= --10V
Switching Time, SW Time -- ns
3 2
Drain Current, ID -- A
100 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 7
td(off) tf tr td(on)
3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
ID= --3A
D C op er
10
at
0m
s
io
n(
Operation in this area is limited by RDS(on).
Ta =
25 °C
)
--1.0
2
3
5
Drain Current, ID -- A
1.5
--10 IT02546
7
--0.01 --0.01 2 3
Ta=25°C Single pulse Mounted on a ceramic board(1000mm2!0.8mm)1unit
5 7--0.1 2 3 5 7 --1.0 2 3 5 7 --10 23
PD -- Ta
Drain-to-Source Voltage, VDS -- V
5 7--100 IT03263
Mounted on a ceramic board(1000mm2!0.8mm)
Allowable Power Dissipation, PD -- W
1.0 0.8
To ta
1un
0.5
ld
it
iss
ipa
tio
n
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03265
No.7000-3/4
Others parts begin by ft
FT-1 FT-2 FT-3 FT-4
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