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Part: FTD1014
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description:
Company: Sanyo Semiconductor Corporation
Datasheet: Download FTD1014 datasheet File size : 178 kB
Request For quote: Find where to buy FTD1014
Datasheet text preview:
Ordering number : ENN7020
FTD1014
P-Channel Silicon MOSFET
FTD1014
Load Switching ad S / W Use LoApplications
Features
· · · ·
Package Dimensions
unit : mm 2155A
[FTD1014]
0.65
0 .9 5
Low ON-resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting.
3.0
0.425
8
5
0.5 4.5 6.4
1
0.25
4
(0.95)
1 : Drain1 2 : Source1 3 : Source1 0.125 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10µs, duty cycle1% Conditions
0.1
1.0
Ratings - 20 ± 10 --2 - 15 0.8 1.0 150 --55 to +150
Unit V V A A W W °C °C
Mounted on a ceramic board (1000mm 2!0.8mm) 1unit Mounted on a ceramic board (1000mm2!0.8mm)
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=- 20V, VGS=0 VGS=± 8V, VDS=0 VDS=- 10V, ID=--1mA VDS=- 10V, ID=--2A Ratings min --20 --1 ± 10 --0.4 4.2 6 --1.4 typ max Unit V µA µA V S
Marking : D1014
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73001 TS IM TA-2736 No.7020-1/4
FTD1014
Continued from preceding page.
Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol RDS(on) 1 RDS(on) 2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--2A, VGS=--4V ID=--2A, VGS=--2.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=- 2A VDS=--10V, VGS=--10V, ID=- 2A VDS=--10V, VGS=--10V, ID=- 2A IS=--2A, VGS=0 Ratings min typ 68 92 820 150 100 17 60 66 56 17 1.5 2 --0.8 --1.5 max 89 130 Unit m m pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD= --10V VIN 0V --4V VIN PW=10µs D.C.1% ID= --2A RL=5
Electrical Connection
D2 S2 S2 G2
D
VOUT
G
FTD1014
P.G
50
S
D1 S1
--6
S1 G1
ID -- VDS
--10 .0V --6. 0V --4 .0V --3 .0 V
.5V
--6
ID -- VGS
VDS= --10V
--5
--5
--2
Drain Current, ID -- A
--4
. --2
0V
Drain Current, ID -- A
--4
--3
--3
VGS= --1.5V
--1
75 Ta =
0 --0.5 --1.0
--1
°C
25
--1.5
0 0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT00392 200 --2.0 --2.5 IT00393
Drain-to-Source Voltage, VDS -- V
200
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Ta=25°C ID= --2.0A
150
150
°C
.0A
100
100
--2.0 ,I = --4.0V D V GS=
= V GS
= --2 V, I D --2.5
--25 °C
--2
--2
A
50
50
0 0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
0 --60
--40
--20
0
20
40
60
80
100
120
140 160 IT00395
Gate-to-Source Voltage, VGS -- V
IT00394
Ambient Temperature, Ta -- °C
No.7020-2/4
FTD1014
Forward Transfer Admittance, yfs -- S
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT00396 --10 --9
yfs -- ID
VDS= --10V
--10 7 5 3 2
IF -- VSD
VGS=0
Forward Current, IF -- A
75°C
Ta=
°C --25
--1.0 7 5 3 2 --0.1 7 5 3 2
25°
C
--0.01 7 5 3 2 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
--0.001
10000 7 5 3 2
Ciss, Coss, Crss -- VDS
f=1MHz
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Diode Forward Voltage, VSD -- V
Ta 25° =75° --25 C C °C
IT00397
VGS -- Qg
VDS= --10V ID= --2A
--8 --7 --6 --5 --4 --3 --2 --1
Ciss, Coss, Crss -- pF
1000 7 5 3 2 100 7 5 3 2 10 0 --2 --4 --6 --8
Ciss
Coss
Crss
--10
--12
--14
--16
--18
--20
0
0
2
4
6
8
10
12
14
16
18
Drain-to-Source Voltage, VDS -- V
1000 7 5
IT00398 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
Total Gate Charge, Qg -- nC
IT00399
SW Time -- ID
ASO
IDP= --15A
<10µs 1m
VDD= --10V VGS= --4V
Drain Current, ID -- A
Switching Time, SW Time -- ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 7 2 3 5 7
tr
s
10
ID= --2A
DC op
td(off)
ms
10
era
0m
s
tf
td(on)
Operation in this area is limited by RDS(on).
tio
n
--1.0
Drain Current, ID -- A
1.5
--10 IT00400
--0.01 --0.01
Ta=25°C Single pulse Mounted on a ceramic board(1000mm2!0.8mm)1unit
2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
PD -- Ta
Drain-to-Source Voltage, VDS -- V
5 7 --10 23 IT03264
Mounted on a ceramic board(1000mm2!0.8mm)
Allowable Power Dissipation, PD -- W
1.0 0.8
To ta
ld is 1un sipa tio it n
0.5
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03265
No.7020-3/4
Others parts begin by ft
FT-1 FT-2 FT-3 FT-4
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