|
|
Part: FTD1015
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description:
Company: Sanyo Semiconductor Corporation
Datasheet: Download FTD1015 datasheet File size : 178 kB
Request For quote: Find where to buy FTD1015
Datasheet text preview:
Ordering number : ENN7001
FTD1015
P-Channel Silicon MOSFET
FTD1015
Load Switching Applications
Features
· · · ·
Package Dimensions
unit : mm 2155A
[FTD1015]
0.65
8
5
0.5 4.5 6.4
0.95
Low ON-resistance. 4V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting.
3.0
0.425
1
0.25
4
(0.95)
1.0
1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 0.125 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10µs, duty cycle1% Conditions
0.1
Ratings - 30 ± 20 --3 - 15 0.8 1.0 150 --55 to +150
Unit V V A A W W °C °C
Mounted on a ceramic board (1000mm 2!0.8mm) 1unit Mounted on a ceramic board (1000mm2!0.8mm)
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=- 30V, VGS=0 VGS=± 16V, VDS=0 VDS=- 10V, ID=--1mA VDS=- 10V, ID=--3A Ratings min --30 --1 ± 10 --1.0 3.5 5 --2.4 typ max Unit V µA µA V S
Marking : D1015
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71001 TS IM TA-2943 No.7001-1/4
FTD1015
Continued from preceding page.
Parameter Symbol RDS(on) 1 RDS(on) 2 RDS(on) 3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--3A, VGS=--10V ID=--2A, VGS=--4.5V ID=--2A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=- 3A VDS=--10V, VGS=--10V, ID=- 3A VDS=--10V, VGS=--10V, ID=- 3A IS=--3A, VGS=0 Ratings min typ 64 94 104 560 150 95 9 6 60 57 12 2 2 --0.82 --1.5 max 84 132 146 Unit m m m pF pF pF ns ns ns ns nC nC nC V
Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage
Switching Time Test Circuit
VIN 0V --10V VIN PW=10µs D.C.1%
VDD= --15V
Electrical Connection
D2 S2 S2 G2
ID= --3A RL=5
D
VOUT
G
FTD1015
P.G
50
S
D1 S1
--6
S1 G1
ID -- VDS
.5V --4 .0 V
.0V --6 .0V --10
--9
ID -- VGS
VDS= --10V
C C 25° C
75°
--3.5 --4.0 IT02845 120 140 160 IT02847
Drain Current, ID -- A
--4
Drain Current, ID -- A
V --3.0
--7 --6 --5 --4 --3 --2
--3
--2
--2.5V
°C
Ta =
--1
0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0 0 --0.5 --1.0 --1.5 --2.0
--2 5
--2.5 --3.0 40 60 80 100
VGS= --2.0V Drain-to-Source Voltage, VDS -- V
200
IT02844
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
200
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
150
150
--3.0A
100
ID= --2.0A
100
50
50
I D=
V --4.0 5V --4. S= , VG S= A G --2.0 A, V 2.0 I D= = -ID .0V = --10 , V GS --3.0A
0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
0 --60
--40
--20
0
20
Gate-to-Source Voltage, VGS -- V
IT02846
Ambient Temperature, Ta -- °C
25
--1
°C
75
°C
Ta= --25 °
--5
--3
--4
.5V
--8
No.7001-2/4
FTD1015
Forward Transfer Admittance, yfs -- S
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT02848 1000
yfs -- ID
VDS= --10V
--10 7 5 3 2
IF -- VSD
VGS=0
Forward Current, IF -- A
--1.0 7 5 3 2 --0.1 7 5 3 2
Ta=
75° C
--25
°C
25° C
Ta= 75°C 25°C
0 --0.2 --0.4
--0.001 --0.6 --0.8 --1.0 --1.2 IT02849
Drain Current, ID -- A
1000 7 5
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Diode Forward Voltage, VSD -- V
VDD= --15V VGS= --10V Ciss, Coss, Crss -- pF
7 5 3 2
Switching Time, SW Time -- ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5
td(off)
tf
Coss
Crss
100 7 5 3 2
td(on)
tr
10 7 --1.0 2 3 5 7 --10 0 --5 --10 --15 --20 IT02851
Drain Current, ID -- A
--12
IT02850 3 2 --10 7 5
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
--25°C
--0.01 7 5 3 2
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --3.0A
--10
IDP= --15A
Drain Current, ID -- A
--8
3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
ID= --3A
DC
10
op er
<10µs 1m 100µs s 10 m s
0m
s
--6
ati
--4
Operation in this area is limited by RDS(on).
on
--2
0 0 2 4 6 8 10 12 14 IT02852
--0.01 --0.01 2 3
Ta=25°C Single pulse Mounted on a ceramic board(1000mm2!0.8mm)1unit
5 7--0.1 2 3 5 7 --1.0 2 3 5 7 --10 23
Total Gate Charge, Qg -- nC
1.5
PD -- Ta
Mounted on a ceramic board(1000mm2!0.8mm)
Drain-to-Source Voltage, VDS -- V
5 7--100 IT03261
Allowable Power Dissipation, PD -- W
1.0 0.8
To ta
ld
1un
0.5
iss
it
ipa
tio
n
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03262
No.7001-3/4
Others parts begin by ft
FT-1 FT-2 FT-3 FT-4
|
|
|
