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Part: FTD2007
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description:
Company: Sanyo Semiconductor Corporation
Datasheet: Download FTD2007 datasheet File size : 178 kB
Request For quote: Find where to buy FTD2007
Datasheet text preview:
Ordering number:ENN6430
N-Channel Silicon MOSFET
FTD2007
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · 4V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting.
Package Dimensions
unit:mm 2155A
[FTD2007]
0.65 8
0.95
3.0 5
0.425
4.5 6.4
1 0.25
4
(0.95)
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10µs, duty cycle1% Conditions
0.1
1.0
0.5
1 : Drain1 2 : Source1 3 : Source1 0.125 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
Ratings 100 ±20 0.8 3.2
2
Unit V V A A W W
°C °C
Mounted on a ceramic board (1000mm ×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm)
0.6 0.8 150 55 to +150
Electrical Characteristics at Ta = 25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=100V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=400mA ID=400mA, VGS=10V ID=400mA, VGS=4V ID=400mA, VGS=3V 0.8 1.0 1.5 0.6 0.65 0.7 0.8 0.95 1.0 Conditions Ratings min 100 10 ±10 2.0 typ max Unit V µA µA V S
Marking : D2007
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2501 No.64301/4
FTD2007
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=800mA, VGS=0 VDS=10V, VGS=10V, ID=800mA VDS=50V, f=1MHz VDS=50V, f=1MHz VDS=50V, f=1MHz See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit Conditions Ratings min typ 150 30 5 8 4 40 25 5.2 0.6 1.14 0.75 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD=50V 10V 0V VIN VIN
Electrical Connection
D2 S2 S2 G2
ID=400mA RL=125
PW=10µs D.C.1%
D G
VOUT
P.G
50
S
FTD2007
D1 S1 S1 G1
1.6
ID -- VDS
3.0
8.0V
2.0 1.8
ID -- VGS
VDS=10V
1.4
V
6.0V
2.5V
1.6
Drain Current, ID A
Drain Current, ID A
1.2
4.0
V
10
1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4
.0V
1.4 1.2 1.0 0.8
2.0V
0.4 0.2
25
0 0.5 1.0
°C
VGS=1.5V
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0 1.5 2.0 2.5 3.0 IT01120
Drain-to-Source Voltage, VDS V
1.4
IT01119 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 --60
Gate-to-Source Voltage, VGS V
RDS(on) -- VGS
Ta=25°C ID=400mA
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on)
1.0
Static Drain-to-Source On-State Resistance, RDS(on)
1.2
0.8
=4 ID
00m
VG A,
0m A
3 S=
--25 °C
V
V 10 S= , VG 4V S=
80 100 120
0.6
40 I D= 40 I D=
--40 --20 0 20
0.4
0m
VG A,
0.2 0 0 1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS V
IT01121
Ambient Temperature, Ta °C
40
60
Ta= 7
0.6
5°C
140
160
IT01122
No.6430-2/4
FTD2007
10
yfs -- ID
VDS=10V
Forward Transfer Admittance, | yfs | S
7 5 3 2
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5
IF -- VSD
VGS = 0
1.0 7 5 3 2 0.1 0.01
Ta
25 =-° 75
°C
C 25°
C
Forward Current, IF A
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0 0.3
0.6
--25°C
3 2
Ta=7 5°C 25°C
0.9
1.2
1.5 IT01124
Drain Current, ID A
1000 7 5
IT01123 1000 7 5 3 2
Diode Forward Voltage, VSD V
SW Time -- ID
VDD=50V VGS=10V tf td(off)
Ciss, Coss, Crss -- VDS
f=1MHz
Switching Time, SW Time ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 3 5
Ciss, Coss, Crss pF
Ciss
100 7 5 3 2 10 7 5 3 2 1.0
Coss
td(on) tr
Crss
7
0.1
2
3
5
7
1.0
2 IT01125 10 7 5 3 2
0
10
20
30
40
50
60
70
80
90
100
Drain Current, ID A
10 9
Drain-to-Source Voltage, VDS V
IT01126
VGS -- Qg
VDS=10V ID=800mA
Drain Current, ID A
ASO
IDP=3.2A
1m
100µs
10
s
Gate-to-Source Voltage, VGS V
8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 IT01127
1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2
ID=0.8A
10
DC op
ms
0m
s
era
tio
n
Operation in this area is limited by RDS(on). Ta= 25°C Single pulse 1 unit
2 3
0.001
Mounted on a ceramic board (1000mm2×0.8mm)
5 7 1.0 2 3 5 7 10 2 3
Total Gate Charge, Qg nC
1.0
0.1
Drain-to-Source Voltage, VDS V
Allowable Power Dissipation (FET1), PD W
0.8
5 7 100 2 IT01128
PD -- Ta
Mounted on a ceramic board (1000mm2×0.8mm)
PD(FET1) -- PD(FET2)
Allowable Power Dissipation, PD W
0.8
0.6
0.6
To
tal
0.4
ss ip ati 1u on nit
Di
0.4
0.2
0.2
0 0 20
0 0 0.2 0.4 0.6 0.8
Ambient Temperature, Ta °C
40
60
80
100
120
140
160
IT01129
Allowable Power Dissipation (FET2), PD W IT01130
No.6430-3/4
Others parts begin by ft
FT-1 FT-2 FT-3 FT-4
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