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Part: FTD2008
Category:
Description:
Company: Sanyo Semiconductor Corporation
Datasheet: Download FTD2008 datasheet File size : 178 kB
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Datasheet text preview:
Ordering number : ENN7002
FTD2008
N-Channel Silicon MOSFET
FTD2008
DC / DC Converter Applications
Features
· · · ·
Package Dimensions
unit : mm 2155A
[FTD2008]
0.65
8
5
0.5 4.5 6.4
0.95
Low ON-resistance. 4V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting.
3.0
0.425
1
0.25
4
(0.95)
1.0
1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 0.125 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10µs, duty cycle1% Conditions
0.1
Ratings 60 ± 20 1.5 6 0.8 1.0 150 --55 to +150
Unit V V A A W W °C °C
Mounted on a ceramic board (1000mm 2!0.8mm) 1unit Mounted on a ceramic board (1000mm2!0.8mm)
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=± 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=0.8A Ratings min 60 10 ± 10 1.0 1.4 2.0 2.4 typ max Unit V µA µA V S
Marking : D2008
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71001 TS IM TA-2229 No.7002-1/4
FTD2008
Continued from preceding page.
Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=0.8A, VGS=10V ID=0.8A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=1.5A VDS=10V, VGS=10V, ID=1.5A VDS=10V, VGS=10V, ID=1.5A IS=1.5A, VGS=0 Ratings min typ 240 320 110 35 10 7 4 24 11 4.5 0.9 0.8 0.82 1.2 max 320 440 Unit m m pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD=30V VIN 10V 0V VIN PW=10µs D.C.1% ID=0.8A RL=37.5
Electrical Connection
D2 S2 S2 G2
D
VOUT
G
P.G
50
S
D1 S1
1.50
S1 G1
ID -- VDS
4.0 V 3.5 V
10.0V 8.0V
3.0
ID -- VGS
VDS=10V
3.0V
2.5
Drain Current, ID -- A
5.0V
1.25
1.00
Drain Current, ID -- A
6.0V
2.0
0.75
1.5
0.50
C
0.25
0.5
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Drain-to-Source Voltage, VDS -- V
600
IT03200
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
600
--25 °
VGS=2.5V
1.0
Ta= 75° C
25°
C
IT03201
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) -- m
500
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Ta=25°C ID=0.8A
500
400
400
300
300
0. I D=
8
VG A,
4V S=
V
0. I D=
200
=10 , VGS 8A
200
100
100
0 0 2 4 6 8 10 12 14 16 18 20
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT03202
Ambient Temperature, Ta -- °C
IT03203
No.7002-2/4
FTD2008
5
yfs -- ID
VDS=10V
5 3 2
IF -- VSD
VGS=0
Forward Transfer Admittance, yfs -- S
3
Forward Current, IF -- A
2
5 3 2
= Ta
0.1 7 5 3 2
0.1 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
0.01 0.5
0.6
--25 °C
7
--2
75
°C
2
25 °C
Ta =
3
75
1.0
5°
C
°C
25
°C
1.0 7 5
0.7
0.8
0.9
1.0 IT03205
5 3 2
Ciss, Coss, Crss -- VDS
f=1MHz
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
IT03204 10 9 8 7 6 5 4 3 2 1 0 0 0.5
Diode Forward Voltage, VSD -- V
VGS -- Qg
VDS=10V ID=1.5A
Ciss, Coss, Crss -- pF
100 7 5 3 2
Ciss
Coss
10 7 5 3 0 10 20
Crss
30
40
50
60 IT03206 10 7 5 3
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Drain-to-Source Voltage, VDS -- V
100 7
Total Gate Charge, Qg -- nC
IT03207
SW Time -- ID
VDD=30V VGS=10V
Drain Current, ID -- A
ASO
IDP=6A
10
10 0m s
Switching Time, SW Time -- ns
5 3 2
td(off)
2 1.0 7 5 3 2 0.1 7 5 3 2
ID=1.5A
10µs 10 0 1m µs s
ms
10 7 5
tf td(on) tr
op era tio Operation in this n area is limited by RDS(on).
Ta=25°C Single pulse Mounted on a ceramic board(1000mm2!0.8mm)1unit
2 3 5 7 1.0 2 3 5 7 10 2 3
DC
3 2 1.0 0.1
2
3
5
7
1.0
2
3
5 IT03208
0.01 0.1
Drain Current, ID -- A
1.2
PD -- Ta
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD(FET1) -- W
1.0
5 7 100 IT03209
PD(FET1) -- PD(FET2)
ou
Allowable Power Dissipation, PD -- W
1.0
M
0.8
nte
do
0.8
na
0.6
ce
ram
0.6
To t
1u
ic
al
bo
nit
di
ard
ss
ip
(1
0.4
ati
0.4
00
on
0m
m2 !0
.8m
0.2
0.2
m)
0 0
Mounted on a ceramic board(1000mm2!0.8mm)
20 40 60 80 100 120 140 160
0 0 0.2 0.4 0.6 0.8 1.0
Ambient Temperature, Ta -- °C
IT03210
Allowable Power Dissipation, PD(FET2) -- W IT03211 No.7002-3/4
Others parts begin by ft
FT-1 FT-2 FT-3 FT-4
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