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Details, datasheet, quote on part number:FTD2013
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Datasheet text preview:
Ordering number:ENN6080A
N-Channel Silicon MOSFET
FTD2013
Load Switching Applications
Features
· Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting.
Package Dimensions
unit:mm 2155A
[FTD2013]
0.65 8
0.95
3.0 5
0.425
4.5 6.4
1 0.25
4
(0.95)
Absolute Maximum Ratings at Ta = 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10µs, duty cycle1% Conditions Ratings 30 ±10 4.5 20 0.8 1.3 150 55 to +150 Unit V V A A W W
Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm)
0.1
Specifications
1.0
0.5
1 : Drain1 2 : Source1 3 : Source1 0.125 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
°C °C
Electrical Characteristics at Ta = 25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=4.5A ID=4.5A, VGS=4V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.5 7 10 25 34 1000 185 135 35 48 Conditions Ratings min 30 1 ±10 1.3 typ max Unit V µA µA V S m m pF pF pF
Marking : D2013
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52200TS (KOTO) TA-2589 No.60801/4
FTD2013
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD IS=4.5A, VGS=0 VDS=10V, VGS=10V, ID=4.5A Conditions See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit Ratings min typ 16 100 140 110 32 1.5 6 0.82 1.2 max Unit ns ns ns ns nC nC nC V
Switching Time Test Circuit
4V 0V VIN VDD=15V
Electrical Connection
D2 S2 S2 G2
VIN PW=10µs D.C.1% D
ID=4.5A RL=3.3 VOUT
G
FTD2013 P.G 50 S
D1 S1 S1 G1
10 9 8
ID - VDS
4.0V
10 9
ID - VGS
VDS=10V
Drain Current, ID A
7 6 5 4 3 2 1 0 0
Drain Current, ID A
3.5V 3.0V 2.5V 2.0V
1.5V
8 7 6 5
3
1
VGS=1.0V
0.5 1.0 1.5 2.0 2.5 3.0
0 0
0.2
0.4
0.6
0.8
1.0
1.2
Ta=
1.4 1.6
25
2
°C
-25
°C
75°
4
C
1.8
2.0
Drain-to-Source Voltage, VDS V
60
Gate-to-Source Voltage, VGS V Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) m
60
R DS(on) - VGS
ID=4.5A
R DS(on) - Ta
Static Drain-to-Source On-State Resistance, RDS(on) m
50
50
ID=2A
40
40
2A I D=
=2.5 ,V GS
V
30
30
.5A I D=4
=4V ,V GS
20
20
10
10
0 0
2
4
6
8
10
12
0 -50
-25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS V
Ambient Temperature, Ta °C
No.6080-2/4
FTD2013
100
| yf s | - ID
VDS=10V
2 10 7 5
I F - VSD
VGS= 0
Forward Transfer Admitance, | yfs | S
7 5
Forward Current, IF A
3 2
3 2 1.0 7 5 3 2
10 7 5 3 2
Ta=
°C -25
C 75°
C 25°
Ta= 75°C
25°C
0.6
0.1 7 5 3 2
1.0 0.1
2
3
5
7
1.0
2
3
5
7 10
2
0.01 0.2
0.3
0.4
0.5
-25°C
0.7 0.8
0.9
1.0
1.1
1.2
Drain Current, ID A
10000 7 5 3 2
Diode Forward Voltage, VSD V f = 1MHz
Gate-to-Source Voltage, VGS V
10 9 8 7 6 5 4 3 2 1
Ciss, Coss, Crss - VDS
VGS - Q g
VDS=10V ID =4.5A
Ciss, Coss, Crss pF
1000 7 5 3 2 100 7 5 3 2 10 0 2 4 6 8 10 12 14 16
Ciss
Coss Crss
18
20
0 0
5
10
15
20
25
30
35
Drain-to-Source Voltage, VDS V
1000 7 5
Total Gate Charge, Qg nC
5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
SW Time - I D
VDD =10V VGS=4V
td(off)
Drain Current, ID A
ASO
IDP=20A
<10µs
1m s
100µs
Switching Time, SW Time ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3
tf
ID=4.5A
10 0m
10 ms
DC o
s
tr
td(on)
pe
O p e r a t i o n in this area i s limited by RDS(on).
ra
tio
n
5
7 1.0
2
3
5
7 10
2
0.01 0.1
Ta= 25°C 1pulse 1unit Mounted on a ceramic board (1000mm2×0.8mm)
2 3 5 7 1.0 2 3 5 7 10 2 3 5
Drain Current, ID A
1.6
Drain-to-Source Voltage, VDS V
PD - Ta
Allowable Power Dissipation, PD W
1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0
To
tal
Di
ss
ip
1u
ati
nit
on
Mounted on a ceramic board (1000mm2×0.8mm)
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta °C
No.6080-3/4
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