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Part: FTD2014
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description:
Company: Sanyo Semiconductor Corporation
Datasheet: Download FTD2014 datasheet File size : 178 kB
Request For quote: Find where to buy FTD2014
Datasheet text preview:
Ordering number:ENN6267
N-Channel Silicon MOSFET
FTD2014
Load Switching Applications
Features
· Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting.
Package Dimensions
unit:mm 2155A
[FTD2014]
0.65 8
0.95
3.0 5
0.425
4.5 6.4
0.5
1 0.25
4
(0.95)
0.125
Absolute Maximum Ratings at Ta = 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10µs, duty cycle1% Conditions Ratings 20 ±10 4 20 0.8 1.3 150 55 to +150 Unit V V A A W W
Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm)
0.1
Specifications
1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
1.0
°C °C
Electrical Characteristics at Ta = 25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=4A ID=4A, VGS=4V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.4 7 10 32 42 700 200 150 42 59 Conditions Ratings min 20 1 ±10 1.3 typ max Unit V µA µA V S m m pF pF pF
Marking : D2014
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21400TS (KOTO) TA-2166 No.62671/4
FTD2014
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD IS=4A, VGS=0 VDS=10V, VGS=10V, ID=4A Conditions See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit Ratings min typ 14 130 83 110 24 1.4 3.2 0.85 1.2 max Unit ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD=10V VIN 4V 0V VIN PW=10µs D.C.1% ID=4A RL=2.5
Electrical Connection
D2 S2 S2 G2
D
VOUT
G
P.G
50
FTD2014
D1 S1 S1 G1
(Top view)
S
3.5V 4.0V
12
ID -- VDS
3.0V 2.5V
Ta=25°C
2.0V
12
ID -- VGS
VDS=10V
10
10
Drain Current, ID A
Drain Current, ID A
8
8
6
6
1.5V
4
4
VGS=1.0V
0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT00425 0 0 0.2 0.4 0.6 0.8 1.0 1.2
--2 5
1.4 1.6
2
°C
2
°C 25
Ta= 75° C
1.8
2.0
Drain-to-Source Voltage, VDS V
90
Gate-to-Source Voltage, VGS V
60
IT00426
RDS(on) -- VGS
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) m
RDS(on) -- Ta
=2.5 , VGS V
Static Drain-to-Source On-State Resistance, RDS(on) m
80 70
50
4A
60 50 40 30 20 10 0 0 2 4 6 8 10 IT00427
A I D=2
40
ID=2A
=4.0V , V GS I D=4A
30
20
10
0 --50
--25
Gate-to-Source Voltage, VGS V
Ambient Temperature, Ta °C
0
25
50
75
100
125
150
IT00428
No.6267-2/4
FTD2014
100
| yf s | - ID
VDS=10V
7 5 3 2
10 7 5 3 2
C 25°
°C --25 Ta=
C 75°
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.2 0.3
IF -- VSD
VGS=0
Forward Transfer Admittance, | yfs | S
Forward Current, IF A
1.0 0.1
0.001 2 3 5 7 1.0 2 3 5
Drain Current, ID A
10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0 2 4 6 8 10 12 14 16
10 IT00429
7
0.4
75 °C 25° C --25 °C
0.6
Ta =
0.5
0.7
0.8
0.9
1.0
1.1
1.2
Diode Forward Voltage, VSD V
10
IT00430
Ciss, Coss, Crss -- VDS
f=1MHz Gate-to-Source Voltage, VGS V
VGS -- Qg
VDS=10V ID=4A
9 8 7 6 5 4 3 2 1 0 0
Ciss, Coss, Crss pF
Ciss
Coss Crss
18
20
5
10
15
20
25 IT00432
Drain-to-Source Voltage, VDS V
1000 7 5
IT00431 100 7 5 3 2
Total Gate Charge, Qg nC
SW Time -- ID
VDD=10V VGS=4V Drain Current, ID A td(off) tf
ASO
IDP ID
<100µs
1m
10 ms
Switching Time, SW Time ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 2 3 5 7
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
s
10
DC op
tr
0m
s
td(on)
er ati Operation in this on area is limited by RDS(on)
Ta= 25°C 1 pulse, 1 unit
Mounted on a ceramic board (1000mm2×0.8mm)
5 7 0.1 2 3 5 7 1.0 23 5 7 10 23 5 7 100 IT00434
1.0
10
0.01 0.01 2 3
Drain Current, ID A
1.4
IT00433
Drain-to-Source Voltage, VDS V
PD -- Ta
Mounted on a ceramic board (1000mm2×0.8mm)
Allowable Power Dissipation, PD W
1.2
1.0
0.8
To
ta
lD
0.6
1u
iss
nit
ip
at
io
n
0.4
0.2 0 0
20
Ambient Temperature, Ta °C
40
60
80
100
120
140
160
IT00435
No.6267-3/4
Others parts begin by ft
FT-1 FT-2 FT-3 FT-4
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