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Part: FTD2015
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description:
Company: Sanyo Semiconductor Corporation
Datasheet: Download FTD2015 datasheet File size : 178 kB
Request For quote: Find where to buy FTD2015
Datasheet text preview:
Ordering number:ENN6393
N-Channel Silicon MOSFET
FTD2015
Load Switching Applications
Features
· Low ON resistance. · 4V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting.
Package Dimensions
unit:mm 2155A
[FTD2015]
0.65 8
0.95
3.0 5
0.425
4.5 6.4
1 0.25
4
(0.95)
Absolute Maximum Ratings at Ta = 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10µs, duty cycle1% Conditions Ratings 30 ±20 4 20 0.8 1.3 150 55 to +150 Unit V V A A W W
Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm)
0.1
Specifications
1.0
0.5
1 : Drain1 2 : Source1 3 : Source1 0.125 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
°C °C
Electrical Characteristics at Ta = 25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=4A ID=4A, VGS=10V ID=4A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 1.0 4.5 6.5 37 52 550 130 80 49 73 Conditions Ratings min 30 1.0 ±10 2.4 typ max Unit V µA µA V S m m pF pF pF
Marking : D2015
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30100TS (KOTO) TA-2499 No.63931/4
FTD2015
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD IS=4A, VGS=0 VDS=10V, VGS=10V, ID=4A Conditions See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit Ratings min typ 10 65 55 50 13 1.5 2.2 0.81 1.2 max Unit ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN 10V 0V VIN PW=10µs D.C.1% VDD=15V ID=4A RL=3.75
Electrical Connection
D2 S2 S2 G2
D G
VOUT
P.G
50
FTD2015
S
D1 S1 S1 G1
(Top view)
9
ID -- VDS
10.0
10 9
ID -- VGS
VDS=10V
4.0V
6.0V
8
V
V
Drain Current, ID A
V
Drain Current, ID A
7 6 5 4 3 2 1 0
3.5
8
3.0
7 6 5 4
VGS=2.5V
2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5
Ta =7 5
2.0
°C
3
25°C
2.5
--25° C
3.0
3.5 IT01283
Drain-to-Source Voltage, VDS V
150
IT01282
Gate-to-Source Voltage, VGS V
100
RDS(on) -- VGS
Ta=25°C
4A
Static Drain-to-Source On-State Resistance, RDS(on) m
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) m
80
100
60
A I D=4
=4V , VGS
0V S=1
ID=2A
50
40
, VG I D=4A
20
0 0 2 4 6 8 10 12 14 16 18 20
0 --60
--40
--20
Gate-to-Source Voltage, VGS V
IT01284
Ambient Temperature, Ta °C
0
20
40
60
80
100
120
140
160
IT01285
No.6393-2/4
FTD2015
Forward Transfer Admittance, | yfs | S
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT01286 10000
yfs -- ID
VDS=10V
10 7 5 3 2
IF -- VSD
VGS = 0
Forward Current, IF A
-Ta=
C 25°
C 75°
C
1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 0.1 0.2 0.3
25°
5°C
25°C
0.6
0.01 0.01
0.001 0.4 0.5 0.7 0.8 0.9 1.0
Drain Current, ID A
1000 7 5
Diode Forward Voltage, VSD V
Ta= 7
--25° C
IT01287
SW Time -- ID
VDD=15V VGS=10V
Ciss, Coss, Crss -- VDS
f=1MHz
7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10
Switching Time, SW Time ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 2 3 5 7
td(off)
Ciss, Coss, Crss pF
Ciss
tf tr td(on)
Coss
Crss
Drain Current, ID A
1.0
10
0
5
10
15
20
25
30 IT01289
IT01288 100 7 5 3 2
Drain-to-Source Voltage, VDS V
10 9 8
VGS -- Qg
VDS=10V ID=4A
Drain Current, ID A
ASO
IDP=20A ID=4A
10
<10µs 10 1m 0µs s
Gate-to-Source Voltage, VGS V
7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 IT01290
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
10
ms
0m
op era Operation in this tio n area is limited by RDS(on).
DC
s
Total Gate Charge, Qg nC
1.5
0.01 0.01
Mounted on a ceramic board (1000mm2×0.8mm)
23 5 7 0.1 23
Ta= 25°C Single pulse 1 unit
Drain-to-Source Voltage, VDS V
5 7 1.0
23
5 7 10
23
5 7 100 IT01291
Mounted on a ceramic board (1000mm2×0.8mm)
PD -- Ta
Allowable Power Dissipation, PD W
1.3
1.0 0.8
To
tal
Di
ss
ip
ati
on
0.5
1u
nit
0 0
20
Ambient Temperature, Ta °C
40
60
80
100
120
140
160
IT01292
No.6393-3/4
Others parts begin by ft
FT-1 FT-2 FT-3 FT-4
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