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Details, datasheet, quote on part number:FTS2011
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Datasheet text preview:
Ordering number:ENN6355
N-Channel Silicon MOSFET
FTS2011
Load Switching Applications
Features
· Low ON resistance. · 2.5V drive. · Mounting height 1.1mm.
Package Dimensions
unit:mm 2147A
[FTS2011]
0.65 8 5
0.5 0.95
3.0
0.425
1
4 0.25
(0.95)
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1%
1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 0.125 7 : Source 8 : Drain SANYO : TSSOP8
4.5 Conditions
6.4
Ratings 20 ±10 8 32 1.3 150 55 to +150
Unit V V A A W °C °C
Mounted on a ceramic board (1000mm2×0.8mm)
Electrical Characteristics at Ta = 25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=8A ID=8A, VGS=4V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.4 15 21 13 18 1950 550 370 17 26 Conditions Ratings min 20 1 ±10 1.3 typ max Unit V µA µA V S m m pF pF pF
Marking : S2011
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60100TS (KOTO) TA-2115 No.6355-1/4
FTS2011
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=8A VDS=10V, VGS=10V, ID=8A VDS=10V, VGS=10V, ID=8A IS=8A, VGS=0 Ratings min typ 24 400 210 290 60 2.6 10 0.8 1.2 max Unit ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD=10V VIN 4V 0V VIN PW=10µs D.C.1% ID=8A RL=1.25
D
VOUT
G
P.G
50
FTS2011
S
20 18 16
ID -- VDS
4.0V
2.5V 2.0V
VDS=10V Ta=25°C Drain Current, ID A
15
ID -- VGS
VDS=10V
Drain Current, ID A
3.0V 3.5V
12
14 12 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0
9
1.5V
6
3
°C
Ta =
75
25°C
0 3.0 0 0.2 0.4 0.6 0.8 1.0
2.5
1.2
--2
1.4
VGS=1.0V Drain-to-Source Voltage, VDS V
IT00436
5° C
1.6
1.8
Gate-to-Source Voltage, VGS V
30
IT00437
30
RDS(on) -- VGS
Ta=25°C Static Drain-to-Source On-State Resistance, RDS (on) m
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS (on) m
25
25
8A
20
20
ID=2A
15
2A I D=
=2.5 , VGS
V
15
A, I D=8
=4.0V VGS
10
10
5
5
0 0 2 4 6 8 10 IT00438
0 --50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS V
Ambient Temperature, Ta °C
IT00439
No.6355-2/4
FTS2011
100
yfs -- ID
VDS=10V
Forward Transfer Admittance, | yfs | S
7 5 3 2
100 7 5 3 2
IF -- VSD
VGS=0
Forward Current, IF A
10 7 5 3 2
-Ta=
75
25
°C
10 7 5 3 2 1.0 7 5 3 2
°C
2
C 5°
1.0 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID A
10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0 2 4 6 8 10 12 14 16
5 7 100 IT00440
0.1 7 5 3 2 0.01 0.2
Ta= 75
°C
0.3
0.4
0.5
0.6
--25° C
0.7
25°
C
0.8
0.9
1.0
1.1
1.2
Diode Forward Voltage, VSD V
10
IT00441
Ciss, Coss, Crss -- VDS
f=1MHz
VGS -- Qg
VDS=10V ID=8V
9
Gate-to-Source Voltage, VGS V
18 20
Ciss Coss Crss
8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 55 60
Ciss, Coss, Crss pF
Drain-to-Source Voltage, VDS V
1000 7 5
IT00442 100 7 5 3 2
Total Gate Charge, Qg nC
IT00443
SW Time -- ID
td(off) tf tr td(on) VDD=10V VGS=4V
ASO
IDP=32A ID=8A
10 m
<10µs
Switching Time, SW Time ns
3 2 100 7 5 3 2 10 7 5 3 2 0.1 0.1 2 3 5 7
1m
10
s
100µs
Drain Current, ID A
10 7 5 3 2 1.0 7 5 3 2
s
DC
0m
s
op
tio Operation in this n area is limited by RDS(on)
era
Drain Current, ID A
1.0
2
3
5
7 10 IT00444
0.1 7 5 Ta=25°C 3 Single pulse 2 2 0.01 Mounted on a ceramic board (1000mm ×0.8mm) 2 3 5 7 10 2 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0
Drain-to-Source Voltage, VDS V
5 7 100 IT00445
2.0
PD -- Ta
Allowable Power Dissipation, PD W
1.5 1.3
M ou nte d
1.0
on a
ce ram ic
0.5
bo ard (10 00 mm 2 ×0 .8m m)
100 120 140 160
0 0 20 40 60 80
Ambient Temperature, Ta °C
IT00446
No.6355-3/4
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