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Details, datasheet, quote on part number:FTS2015
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Datasheet text preview:
Ordering number : ENN6667
FTS2015
N-Channel Silicon MOSFET
FTS2015
Ultrahigh-Speed Switching Applications
Features
· · ·
Package Dimensions
unit : mm 2147A
[FTS2015]
0.65
Low ON-resistance. 2.5V drive. Mount height 1.1mm.
8
5
0.5 4.5 6.4
0.95
3.0
0.425
1
0.25
4
0.95
0.125
1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 7 : Source 8 : Drain SANYO : TSSOP8
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Mounted on a ceramic board (1000mm !0.8mm)
2
Conditions
0.1
1.0
Ratings 30 ± 10 7 28 1.3 150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS I GSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=7A ID=7A, VGS=4V ID=2A, VGS=2.5V Ratings min 30 1 ± 10 0.4 15 22 16 22 21 31 1.3 typ max Unit V µA µA V S m m
Marking : S2015
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82200 TS IM TA-2895 No.6667-1/4
FTS2015
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=7A VDS=10V, VGS=10V, ID=7A VDS=10V, VGS=10V, ID=7A IS=7A, VGS=0 Ratings min typ 1550 310 190 22 100 205 165 60 2.5 10 0.88 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD=15V VIN 4V 0V VIN PW=10ms D.C.1% ID=7A RL=2.1
D
VOUT
G
P.G
50
FTS2015
S
3.5V
15
ID -- VDS
2.0V
15
ID -- VGS
VDS=10V
4.0V
12
2.5V
12
Drain Current, ID -- A
3.0V
9
1.5V
Drain Current, ID -- A
9
6
6
°C 25
5°
0 0 0.5 1.0 1.5 2.0
C
0 0.2 0.6 0.8
3
VGS=1.0V
0 2.5 3.0 IT00447 0.4
Ta =7
1.0
--2 5
°C
3
1.2
1.4
1.6
1.8
Drain-to-Source Voltage, VDS -- V
35
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
40
IT00448
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
30
35 30 25 20 15 10 5 0 --50
25
ID=2A
20
7A
15
2.5V S= 2A, VG I D= =4V VGS =7A, ID
10
5 0 0 2 4 6 8 10 12 IT00449
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
IT00450
No.6667-2/4
FTS2015
100
|yfs| -- ID
VDS=10V
Forward Transfer Admittance, |yfs| -- S
7 5 3 2
°C 25
Forward Current, IF -- A
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
IF -- VSD
VGS=0
10 7 5 3 2
= Ta
5 --2
°C
75° C
1.0 0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
0.01 7 5 3 2 0.001 0.2
5°C
25°C
0.3
0.4
--25° C
0.6
Ta= 7
0.5
0.7
0.8
0.9
1.0
1.1
1.2
Drain Current, ID -- A
10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0 5 10 15 20 25
IT00451 10 9
Diode Forward Voltage, VSD -- V
IT00452
Ciss, Coss, Crss -- VDS
f=1MHz
VGS -- Qg
VDS=10V ID=7A
Gate-to-Source Voltage, VGS -- V
8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 55 60
Ciss, Coss, Crss -- pF
Ciss
Coss Crss
30 IT00453 100 7 5 3 2
Drain-to-Source Voltage, VDS -- V
1000 7 5
Total Gate Charge, Qg -- nC
IT00454
SW Time -- ID
td(off) tf tr td(on) VDD=15V VGS=4V
ASO
IDP=28A ID=7A <10µs
1m
Switching Time, SW Time -- ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7
Drain Current, ID -- A
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
10
10
s
ms
100µs
DC
0m
s
op
era
tio
n
Operation in this area is limited by RDS(on) Ta=25°C Single pulse 2 Mounted on a ceramic board (1000mm !0.8mm)
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23
1.0
2
3
5
7
10
2
3
0.01 0.01
Drain Current, ID -- A
2.0
IT00455
Drain-to-Source Voltage, VDS -- V
5 7100 IT00456
PD -- Ta
Allowable Power Dissipation, PD -- W
1.5 1.3
M
ou
nte
do
1.0
na
ce
ram
ic
bo
ard
(10
0.5
00
mm 2 !0
.8m
m)
160
0 0
20
40
60
80
100
120
140
Ambient Tamperature, Ta -- °C
IT00457
No.6667-3/4
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