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Details, datasheet, quote on part number:FTS2022
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Datasheet text preview:
FTS2022
N- Channel Silicon MOS FET DC/DC Converter Use
Features · Low ON-state resistance. · 4V Drive. · Very high speed switching. · Mount height 1.1mm.
Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage Marking : S2022 Switching Time Test Circuit
VIN 10V 0V VIN PW=10µS D.C.1% D VDD=15V ID=7A RL=2.1 VOUT 6.4 4.5
TENTATIVE
unit
VDSS VGSS ID IDP PD Tch Tstg
PW10µS, dutycycle1% Mounted on ceramic board (1000mm2 0.8mm) 1unit
30 ±20 7 28 1.3 150 --55 to ±150 min 30
V V A A W °C °C
typ
max 1 ±10 2.4
V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) 1 RDS(on) 2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD
ID=1mA VDS=30V VGS=±16V VDS=10V VDS=10V ID=7A ID=4A VDS=20V VDS=20V VDS=20V
, , , , , , , , , ,
VGS=0 VGS=0 VDS=0 ID=1mA ID=7A VGS=10V VGS=4.5V f=1MHz f=1MHz f=1MHz
1.0 7.7
See Specified Test Circuit
VDS=10V,VGS=10V.ID=7A IS=7A , VGS = 0
11 19 27 750 300 120 10 147 53 58 14 2.5 1.3
25 38
1.2
unit V µA µA V S m m pF pF pF ns ns ns ns nC nC nC V
Case Outline
TSSOP8(unit:mm)
3.0 8765 0.95 0.65 0.425
G 1:Drain 2:Source 3:Source 4:Gate 5:Drain 6:Source 7:Soource 8:Drain
P.G
50 S
FTS2022
0.25
0.95
1234
0.125
Specifications and information herin are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
990921TM2fXHD
0.1 1.0
0.50
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