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Details, datasheet, quote on part number:FW101
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| Part: | FW101 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | |
| Company: | Sanyo Semiconductor Corporation |
| Datasheet: | Download FW101 datasheet File size : 11 kB |
| Request For quote: | Find where to buy FW101
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Datasheet text preview:
FW 101
P- Channel Silicon MOS FET Very High-Speed Switching Applications
Features and Applications · High density mounting is possible because of the complex type which holds two chips of a low on-resistance, Very-high speed switching and 2.5-volt-drive, P channel MOSFET in one package. · The two chips have near characteristics Absoulute Maximum Ratings / Ta=25°C Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (D.C) ID Drain Current (Pulse) IDP Allowable power Dissipation PD All Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source on State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-oFF Delay Time Fall Time Diode Forward Voltage Marking : W101
Switching Time Test Circuit
VIN 0V --4V VIN PW=10µS D.C.1% D VDD=--6V ID=--3A RL=2 VOUT
4 5
TENTATIVE
unit --12 ±10 --3 --12 1.7 2.0 150 --55 to +150 V V A A W W °C °C min V(BR)DSS IDSS IGSS VGS(OFF) yfs RDS(On)1 RDS(On)2 Ciss Coss Crss td(On) tr td(Off) tf VSD ID=--1mA VDS=--10V VGS=±8V VDS=--6V VDS=--6V ID=--3A ID=--1A VDS=--6V VDS=--6V VDS=--6V , , , , , , , , , , VGS=0 VGS=0 VDS=0 ID=--1mA ID=--3A VGS=--4V VGS=--2.5V f=1MHz f=1MHz f=1MHz --12 --100 ±10 --1.4 8 85 115 650 450 150 20 260 250 280 --1.0 115 165 typ max unit V µA µA V S m m pF pF pF ns ns ns ns V
PT Tch Tstg
PW10µS, dutycycle1% Mounted on ceramic board (1000mm 2 ×0.8mm) Mounted on ceramic board (1000mm 2 ×0.8mm)
--0.4 5
See Specified Test Circuit . IS =--3A , VGS = 0
--1.2
Electrical Connection (Top View)
D1 D1 D2 D2
Case Outline SOP8(unit:mm)
1 2 3 8
G
4.4
1.5 1.8max
0.1
P.G
50 S
FW101
S1 G1 S2 G2
0.3 6.0
1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2 6:Drain2 7:Drain1 8:Drain1
Specifications and information herein are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Ttokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
950713TM2fXHD-1/2
0.15
1.27
6
5.0
7
0.43
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