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Details, datasheet, quote on part number:FW111
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Datasheet text preview:
Ordering number:EN5909
P-Channel Silicon MOSFET
FW111
Load S/W Applications
Features
· 2.5V drive. · Low ON resistance.
Package Dimensions
unit:mm 2129
8 5
[FW111]
0.3 4.4 6.0
0.2
5.0
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg
0.595
1.27
0.43
0.1
1.5
1.8max
1
4
1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SOP8
Conditions
Ratings 20 ±10 5
Unit V V A A W W
PW10µs, duty cycle1%
32 1.7 2.0 150 55 to +150
Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm)
°C °C
Electrical Characteristics at Ta = 25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=4V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.4 8 12 44 65 980 500 210 58 98 Conditions Ratings min 20 100 ±10 1.4 typ max Unit V µA µA V S m m pF pF pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1498TS (KOTO) TA-1214 No.5909-1/4
FW111
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD IS=5A, VGS=0 VDS=10V, VGS=10V, ID=5A Conditions See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit Ratings min typ 20 115 110 105 30 5 7 1.0 1.5 max Unit ns ns ns ns nC nC nC V
Switching Time Test Circuit
0V 4V VIN VDD=10V ID=5A RL=2
VIN PW=10µs D.C.1%
D
VOUT
G
P.G
50
FW111
S
-6
I D - VDS
-6V -4V
-3V -2. 5V
-10
I D - VGS
VDS = -10V
-9 -8
-5
Drain Current, ID A
-8V
Drain Current, ID A
-4
-7 -6 -5 -4 -3
-2
V
-3
-2
0 0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
0 0
-0.5
-1.0
-1.5
Ta =
-1
25
°C
-2
-1
5°C
-2.0
VGS=-1.5V
75
-2
°C
-2.5
Drain-to-Source Voltage,VDS V
100 7 VDS= -10V 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 -0.01 2 3 5 7 -0.1 23 5 7 -1.0 Current, ID 23 5 7 -10 2
Gate-to-Source Voltage, VGS V
100
| yf s | - I D
Static Drain-to-Source On-State Resistance, RDS (on) m
R DS(on) - VGS
Ta=25°C ID= -5A
Forward Transfer Admittance, | yfs | S
90 80
-2A
70 60 50 40 30 20 10 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
Ta
=-
25
°C
25°
C
C 75°
Drain
A
Gate-to-Source Voltage, VGS V
No.5909-2/4
FW111
140 120 100 80 60 40 20 0 -60
GS 2A,V I D =-
R DS(on) - Tc
-10 7 5
I F - VSD
V GS= 0
Static Drain-to-Source On-State Resistance, RDS (on) m
Forward Current, IF A
3 2 -1.0 7 5
V =-2.5
Ta =7 5°C 25°C
-0.2 -0.4 -0.6
=-4V A,VGS ID =-5
-0.1 7 5 3 2
-40
-20
0
20
40
60
80
100
120
140
-0.01 0
- 25°C
-0.8
3 2
-1.0
-1.2
-1.4
Case Temperature, Tc °C
10000 7 5
Diode Forward Voltage, VSD V
-10
Ciss,Coss,Crss - VDS
f = 1MHz
VGS - Qg
VDS=-10V -9 ID =-5A
-8 -7 -6 -5 -4 -3 -2 -1 0 0 5 10 15 20 25 30
Ciss,Coss,Crss pF
3 2
1000 7 5 3 2 100 0
Ciss
Coss
Crss
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
Gate-to-Source Voltage, VGS V
Drain-to-Source Voltage,VDS V
1000 7 5
Total Gate Charge, Qg nC
7 5 I DP = 3 2 A 3 2
SW Time - I D
VDD =-10V VGS=-4V
Switching Time, SW Time ns
Drain Current, ID A
3 2 100 7 5 3 2 10 -0.1
t d(off)
tf
tr
-10 7 5 3 2 -1.0 7 5 3 2
t d(on)
2
3
5
7 -1.0
2
3
5
7 -10
2
-0.1 7 5 Ta= 25°C 3 1pulse 2 1unit Mounted on a ceramic board (1000mm2×0.8mm) -0.01 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10
,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,,
ID=5A
DC
ASO
100µs
10
10 0m s
1m s
ms
op
er
at
io
n
O p e r a t i o n in this area i s limited by RDS(on).
23
Drain Current, ID A
Allowable Power Dissipation, PD (FET2) W
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS V
2.5
P D (FET2) - P D (FET1)
W
P D - Ta
M
nte
do
na
Allowable Power Dissipation, PD
ou
2.0
1.7
ce
ram
ic
1.5
bo
To
ard
tal
(1
Di
00
ss
0m
m2 ×0
1.0
ip
1u
ati
.8m
nit
on
m)
0.5
0 0
Mounted on a ceramic board (1000mm2×0.8mm)
20 40 60 80 100 120 140 160
Allowable Power Disipation, PD (FET1) W
Ambient Temperature, Ta °C
No.5909-3/4
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