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Details, datasheet, quote on part number:FX502
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Datasheet text preview:
Ordering number:EN4878
FX502
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Features
· Composite type with 2 NPN transistors contained in one package, facilitating high-density mounting. · The FX502 houses two chips, each being equivalent to the 2SD1805, in one package. · Matched pair characteristics.
Package Dimensions
unit:mm 2118
[FX502]
1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 SANYO:XP6 (Bottom view)
Switching Time Test CIrcuit
E l e c t r i c a l Connection
1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 (Top view)
Specifications
A b s o l u t e Maximum Ratings at Ta = 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg Mounted on ceramic board (750mm2×0.8mm) 1 unit Mounted on ceramic board (750mm2×0.8mm) Conditions Ratings 60 20 6 5 8 1 1.5 2 150 55 to +150 Unit V V V A A A W W °C °C
· Marking:502
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/42695MO (KOTO) BX-1389 No.4878-1/4
FX502
Continued from preceding page. E l e c t r i c a l Characteristics at Ta = 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 hFE(small/ large) fT Cob VCE(sat) VCB=50V, IE=0 VEB=5V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=3A VCE=2V, IC=500mA VCE=10V, IC=500mA VCB=10V, f=1MHz IC=3A, IB=60mA 60 20 6 30 300 40 160 95 0.8 220 45 220 1.0 500 1.5 MHz pF mV V V V V ns ns ns Conditions Ratings min typ max 100 100 560 Unit nA nA
VBE(sat) IC=3A, IB=60mA V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO ton tstg tf IE=10µA, IC=0 See sepcified Test Circuit See sepcified Test Circuit See sepcified Test Circuit
No.4878-2/4
FX502
No.4878-3/4
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