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Details, datasheet, quote on part number:FX506
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| Part: | FX506 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | NPN Epitaxial Planar Composite Silicon Transistor, High-current Switching Application |
| Company: | Sanyo Semiconductor Corporation |
| Datasheet: | Download FX506 datasheet File size : 138 kB |
| Request For quote: | Find where to buy FX506
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Datasheet text preview:
Ordering number:EN4880
FX506
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Features
· Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. · The FX506 houses two chips, each being equivalent to the 2SD1803, in one package. · Matched pair characteristics.
Package Dimensions
unit:mm 2118
[FX506]
1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 SANYO:XP6 (Bottom view)
Switching Time Test CIrcuit
Electrical Connection
1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 (Top view)
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC I CP IB PC PT Tj Tstg Mounted on ceramic board (750mm2×0.8mm) 1unit Mounted on ceramic board (750mm2×0.8mm) Conditions Ratings 60 50 6 5 8 1 1.5 2 150 55 to +150 Unit V V V A A A W W °C °C
· Marking:506
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/42695MO (KOTO) BX-1391 No.4880-1/4
FX506
Continued from preceding page. Electrical Characteristics at Ta = 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 hFE(small/ large) fT Cob VCE(sat) VBE(sat) VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=4A VCE=2V, IC=500mA VCE=5V, IC=500mA VCB=10V, f=1MHz IC=3A, IB=150mA 60 50 6 50 500 20 140 35 0.8 180 40 220 0.95 400 1.3 MHz pF mV V V V V ns ns ns Conditions Ratings min typ max 1 1 400 Unit µA µA
IC=3A, IB=150mA V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO ton tstg tf IE=10µA, IC=0 See sepcified Test Circuit See sepcified Test Circuit See sepcified Test Circuit
No.4880-2/4
FX506
No.4880-3/4
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