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Details, datasheet, quote on part number:FX803
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| Part: | FX803 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | NPN Epitaxial Planar Silicon Transistor + Schottky Barrier Diode, DC-DC Convertor |
| Company: | Sanyo Semiconductor Corporation |
| Datasheet: | Download FX803 datasheet File size : 127 kB |
| Request For quote: | Find where to buy FX803
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Datasheet text preview:
Ordering number:EN5053
FX803
TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode (Twin type · Cathode Common)
DC-DC Converter
Features
· Complex type of a low saturation voltage, high speed switching and large current NPN transistor and a fast recovery and low forward voltage Schottky barrier diode facilitating high-sensity mounting. · The FX803 is composed of 2 chips, one being equivalent to the 2SB1628 and the other the SB20W03P, placed in one package.
Package Dimensions
unit:mm 2126
[FX803]
Electrical Connection
1:Base 2:Emitter 3:Anode1 4:Anode2 5:Cathode 6:Collector (Top view)
1:Base 2:Emitter 3:Anode1 4:Anode2 5:Cathode 6:Collector SANYO:XP6 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature [SBD] (Value per element) Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IO IFSM Tj Tstg (Total) 50Hz sine wave, 1cycle 30 35 2 4 10 55 to +125 55 to +125 V V A A A °C °C VCBO VCEO VEBO IC ICP IB PC Tj Mounted on ceramic board (750mm2×0.8mm) 1 unit 60 20 6 5 8 1 1.5 150 V V V A A A W °C Symbol Conditions Ratings Unit
· Marking:803
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41095TS (KOTO) TA-0135 No.5053-1/4
FX803
Continued from preceding page. Electrical Characteristics at Ta = 25°C
Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time [SBD] (Value per element) Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF IR C trr Rthj-a IR=500µA IF=2A VR=15V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit Mounted on ceramic board (750mm2×0.8mm) 70 20 85 30 0.55 100 V V µA pF ns °C/W ICBO IEBO hFE(1) hFE(2) fT Cob VCE(sat) VBE(sat) VCB=50V, IE=0 VEB=5V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=3A VCE=10V, IC=500mA VCE=10V, f=1MHz IC=3A, IB=60mA 60 20 6 30 300 40 160 95 220 45 220 1.0 500 1.5 MHz pF mV V V V V ns ns ns 100 100 560 nA nA Symbol Conditions Ratings min typ max Unit
IC=3A, IB=60mA V(BR)CBO IC=10µA, IE=0 V(BR)CEO IE=1mA, RBE= V(BR)EBO ton tstg tf IE=10µA, IC=0 See sepcified Test Circuit See sepcified Test Circuit See sepcified Test Circuit
Switching Time Test CIrcuit
[TR]
Trr Test Circuit
[SBD]
No.5053-2/4
FX803
No.5053-3/4
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