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Details, datasheet, quote on part number:MCH3106
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Datasheet text preview:
Ordering number : ENN6861A
MCH3106
PNP Epitaxial Planar Silicon Transistor
MCH3106
DC / DC Converter Applications
Applications
·
Package Dimensions
unit : mm 2194A
[MCH3106]
0.25
Relay drivers, lamp drivers, motor drivers, strobes.
Features
· · · · ·
·
Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilicates miniaturization in end products (mounting height : 0.85mm). High allowable power dissipation.
0.3 3
0.15
2.1
1.6
0.25
0.65 2.0
(Bottom view)
0.07
2
1
3
1 : Base 2 : Emitter 3 : Collector
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board(600mm2!0.8mm) Conditions
0.85
1
2
(Top view)
SANYO : MCPH3
Unit - 15 - 12 --5 --3 --5 --600 0.9 150 --55 to +150 V V V A A mA W °C °C
Ratings
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Marking : AF Symbol ICBO I EBO hFE fT Cob VCE(sat) VBE(sat) Conditions VCB=- 12V, IE=0 VEB=- 4V, IC=0 VCE=- 2V, IC=--500mA VCE=- 2V, IC=--500mA VCB=- 10V, f=1MHz IC=--1.5A, IB=--30mA IC=--1.5A, IB=--30mA Ratings min typ max --0.1 --0.1 200 280 36 -- 110 ---0.85 --165 --1.2 560 MHz pF mV V Unit µA µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20502 TS IM / 22201 TS IM TA-3071 No.6861-1/4
MCH3106
Continued from preceding page.
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=--10µA, IE=0 IC=--1mA, RBE= IE=--10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --15 --12 --5 30 90 10 typ max Unit V V V ns ns ns
Switching Time Test Circuit
PW=20µs D.C.1% INPUT IB1 OUTPUT IB2 VR 50W + 220µF VBE=5V IC=20IB2= --20IB1= --1.5A + 470µF VCC= --5V 1k
RL
--2.0
IC -- VCE
mA --1 6
--1.8
4 --1
mA
--200
IC -- VCE
--0.8mA --0.7mA
--0.6mA
--12mA --10mA
--180
Collector Current, IC -- A
Collector Current, IC -- A
--1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.2 --0.4 --0.6 --0.8
--160 --140 --120 --100 --80 --60 --40
--8mA --6mA --4mA --2mA
--0.5mA
--0.4mA
--0.3mA
--0.2mA
--0.1mA
--20
IB=0
--1.0 IT02777
0
IB=0
0 --1 --2 --3 --4 --5 IT02778
Collector-to-Emitter Voltage, VCE -- V
--3.5
IC -- VBE
VCE= --2V
Collector-to-Emitter Voltage, VCE -- V
1000 7 5 3 2
hFE -- IC
VCE= --2V
--3.0
Collector Current, IC -- A
--2.5
DC Current Gain, hFE
--2.0
100 7 5 3 2 10 7 5 3 2
--1.5
--1.0
--0.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT02779
1.0 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
5 7 --10 IT02780
No.6861-2/4
MCH3106
--1.0 7 5
VCE(sat) -- IC
IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
--1.0 7 5 3 2
VCE(sat) -- IC
IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
3 2 --0.1 7 5 3 2
--0.1 7 5 3 2
--0.01 7 5 3 2
--0.001 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
--10 7
5 7 --10 IT02781
--0.01 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
1000 7 5
5 7 --10 IT02782
VBE(sat) -- IC
IC / IB=50 Output Capacitance, Cob -- pF
Cob -- VCB
f=1MHz
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
5 3 2
3 2 100 7 5 3 2 10 7 5 3 2
--1.0 7 5 3 2
--0.1 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
1000 7
5 7 --10 IT02783
1.0 --0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
f T -- IC
VCE= --2V
Collector-to-Base Voltage, VCB -- V
--10 7 5
IT02784
ASO
Gain-Bandwidth Product, f T -- MHz
5
Collector Current, IC -- A
3 2
3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
ICP= --5A IC= --3A
DC
10
10
op era
ms
50
1m
0µ
0m
s
s
s
tio
n
100 7 5 3 2
10 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
Collector Current, IC -- A
1.2
5 7 --10 IT02785
--0.01 --0.1
Ta=25°C Single pulse Mounted on a ceramic board(600mm2!0.8mm)
2 3 5 7 --1.0 2 3 5
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
7 --10 2 IT02786
Collector Dissipation, PC -- W
1.0 0.9 0.8
M
ou
nte
do
na
0.6
ce
ram
ic
bo
ard
0.4
(60
0m
m2 !0
0.2
.8m
m)
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02787
No.6861-3/4
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