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Details, datasheet, quote on part number:MCH3205
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Datasheet text preview:
Ordering number : ENN7128
MCH3105 / MCH3205
PNP / NPN Silicon Epitaxial Planar Transistors
MCH3105 / MCH3205
High-Current Switching Applications
Applications
·
Package Dimensions
DC / DC converters, relay drivers, lamp drivers, motor unit : mm drivers, strobes. 2194A
[MCH3105 / MCH3205]
0.25
Features
· · · · ·
0.3 3
0.15
·
Adoption of FBET, MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultraminiature package facilitates miniaturization in end products (mounting height : 0.85mm). High allowable power dissipation.
2.1
1.6
0.25
0.65 2.0
(Bottom view)
0.07
2
1
3
1 : Base 2 : Emitter 3 : Collector
Specifications ( ) : MCH3105
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board(600mm2!0.8mm) Conditions
0.85
1
2
(Top view)
SANYO : MCPH3
Unit (--50)80 (--50)80 (--)50 (--)6 (--)3 (--)6 (--)600 0.8 150 --55 to +150 V V V V A A mA W °C °C
Ratings
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO I EBO hFE fT Cob Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(- )100mA VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz Ratings min typ max ( - )1 ( - )1 200 (360)380 (24)13 560 MHz pF Unit µA µA
Marking : MCH3105 : AE / MCH3205 : CE
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13002 TS IM TA-3557 No.7128-1/5
MCH3105 / MCH3205
Continued from preceding page.
Parameter Symbol VCE(sat)1 Collector-to-Emitter Saturation Voltage VCE(sat)2 Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf IC=(--)2A, IB=(- )100mA IC=(--)2A, IB=(- )100mA IC=(--)10µA, IE=0 IC=(--)100µA, RBE=0 IC=(--)1mA, RBE= IE=(- )10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Conditions IC=(--)1A, IB=(--)50mA Ratings min typ (--100) 80 (--185) 140 ( - )0.88 (--50)80 (--50)80 (--)50 (--)6 (30)35 (230)300 (15)22 max (--200) 120 (--500) 210 (--)1.2 Unit mV mV mV mV V V V V V ns ns ns
Switching Time Test Circuit
PW=20µs D.C.1% INPUT IB1 OUTPUT IB2 VR 50 + 100µF VBE= --5V + 470µF VCC=25V RB
RL
IC=10IB1= --10IB2=1A (For PNP, the polarity is reversed.)
--2.0
IC -- VCE
MCH3105
5.0
IC -- VCE
MCH3205
0 --4
mA
0m --3
A
--20
mA
4.5
100m
A
80mA
Collector Current, IC -- A
A --8m
--1.2
Collector Current, IC -- A
--1.6
--10m
A
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
60mA 40mA
--6mA
--4mA
20mA
10mA
--0.8
--2mA
--0.4
5mA
0 0 --0.2 --0.4 --0.6 --0.8
IB=0
--1.0
0
0 0.4 0.8 1.2 1.6
IB=0
2.0
Collector-to-Emitter Voltage, VCE -- V
3.0
IT03963 3.0
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
IT03964
IC -- VBE
MCH3105 VCE= --2V
MCH3205 VCE=2V
2.5
2.5
Collector Current, IC -- A
Ta=75° C 25°C --25°C
2.0
Collector Current, IC -- A
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0 0 0.2 0.4 0.6 0.8 1.0 IT03966
Base-to-Emitter Voltage, VBE -- V
IT03965
Base-to-Emitter Voltage, VBE -- V
Ta=75°
C 25°C --25°C
No.7128-2/5
MCH3105 / MCH3205
1000 7 5
hFE -- IC
MCH3105 VCE= --2V
1000 7 5
hFE -- IC
MCH3205 VCE=2V
Ta=75°C
--25°C
25°C DC Current Gain, hFE
DC Current Gain, hFE
3 2
3 2
Ta=75°C
--25°C
25°C
100 7 5 3 2
100 7 5 3 2
10 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
10 0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
Collector Current, IC -- A
1000
IT03967 1000
Collector Current, IC -- A
IT03968
f T -- IC
Gain-Bandwidth Product, f T -- MHz MCH3105 VCE= --10V
f T -- IC
MCH3205 VCE=10V
Gain-Bandwidth Product, f T -- MHz
7 5 3 2
7 5 3 2
100 7 5 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5
100 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5
Collector Current, IC -- A
100
IT03969 100 7
Cob -- VCB
Collector Current, IC -- A
IT03970
Cob -- VCB
MCH3205 f=1MHz
MCH3105 f=1MHz Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
7
5 3 2
5
3
10 7 5 3
2
10 --1.0
2
3
5
7
--10
2
3
5
7
2 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
57 IT03972
Collector-to-Base Voltage, VCB -- V
--10000 7 5 3 2
IT03971 1000 7
VCE(sat) -- IC
MCH3105 IC / IB=20
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
5 3 2
MCH3205 IC / IB=20
--1000 7 5 3 2 --100 7 5 3 2 --10 --0.01 2 3 5 7 --0.1
100 7 5 3 2
C 75° Ta= C 25° °C --25
2 3 5 7 --1.0 2 3 5 7 --10 IT03973
7 Ta=
5°C
C
2
--25°
2 3 5 7 0.1
25
3
°C
10 0.01
5
7 1.0
2
3
5
Collector Current, IC -- A
Collector Current, IC -- A
IT03974
No.7128-3/5
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