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Details, datasheet, quote on part number:MCH3206
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Datasheet text preview:
Ordering number : ENN7130
MCH3206
NPN Silicon Epitaxial Planar Transistor
MCH3206
DC / DC Converter Applications
Applications
·
Package Dimensions
unit : mm 2194A
[MCH3206]
0.25
Relay drivers, lamp drivers, motor drivers, strobes.
Features
· · · · ·
·
Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. Ultrasmall package facilitates miniaturization in end products (0.85mm). High allowable power dissipation.
0.3 3
0.15
2.1
1.6
0.25
0.65 2.0
(Bottom view)
0.07
2
1
3
1 : Base 2 : Emitter 3 : Collector
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board(600mm2!0.8mm) Conditions
0.85
1
2
(Top view)
SANYO : MCPH3
Unit 15 15 5 3 5 600 0.8 150 --55 to +150 V V V A A mA W °C °C
Ratings
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO I EBO hFE fT Cob Conditions VCB=12V, IE=0 VEB=4V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, f=1MHz Ratings min typ max 0.1 0.1 200 380 13 560 MHz pF Unit µA µA
Marking : CF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3001 TS IM TA-3369 No.7130-1/4
MCH3206
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=1.5A, IB=30mA IC=3A, IB=60mA IC=1.5A, IB=30mA IC=10µA, IE=0 IC=1mA, RBE= IE=10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 15 15 5 30 210 11 Ratings min typ 100 180 0.85 max 150 270 1.2 Unit mV mV V V V V ns ns ns
Switching Time Test Circuit
PW=20µs DC1% INPUT IB1 OUTPUT IB2 VR 50 + 220µF VBE= --5V + 470µF VCC=5V 1k
RL
IC=20IB1= --20IB2=1.5A
5
IC -- VCE
mA 60
5
IC -- VCE
A 40m
40m
A
25mA
Collector Current, IC -- A
4
25mA
20mA
Collector Current, IC -- A
4
20mA
15mA
3
3
15mA 10mA
10mA
2
2
5mA
1
5mA
1
IB=0 1mA
0 0 0.2 0.4 0.6 0.8
2mA
0 1.0 IT03982 1000 0 2 4 6
IB=0 1mA
8
2mA
10 IT03983
Collector-to-Emitter Voltage, VCE -- V
6.0 5.5 5.0
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
hFE -- IC
VCE=2V
VCE=2V
7
Collector Current, IC -- A
DC Current Gain, hFE
4.5 4.0 3.5 3.0
5
Ta=75°C
25°C
--25°C
3
2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6
Ta=75 °C 25°C --25°C
2.5
2
0.8
1.0 IT03984
100 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
5 7 10 IT03985
No.7130-2/4
MCH3206
5
VCE(sat) -- IC
IC / IB=20
5
VCE(sat) -- IC
IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
2
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
3
3 2
100 7 5 3 2
100 7 5 3 2
= Ta
7
C 5°
--2 C 5°
25
°C
°C 75 a= °C T 5 --2
25
°C
10 7 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT03986
10 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT03987
Collector Current, IC -- A
10 7
VBE(sat) -- IC
Collector Current, IC -- A
100
Cob -- VCB
IC / IB=50
f=1MHz
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
3 2
Output Capacitance, Cob -- pF
2 3 5 7 10 IT03988
5
7
5
1.0 7 5 3 2
Ta= --25°C
3
75°C
25°C
2
0.1 0.01
2
3
5 7 0.1
2
3
5 7 1.0
10 1.0
2
3
5
7
10
2
3
5 IT03989
Collector Current, IC -- A
1000
f T -- IC
Collector-to-Base Voltage, VCB -- V
10 7 5
ASO
VCE=2V
Gain-Bandwidth Product, f T -- MHz
7 5
Collector Current, IC -- A
3 2 1.0 7 5 3 2 0.1 7 5 3 2
ICP=5A IC=3A
100µs
50 s 0µ
1m
DC
10
op era
s 10m
0m
s
3 2
s
tio
n
100 7 5
3 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5
0.01 0.1
Ta=25°C Single pulse Mounted on a ceramic board (600mm2!0.8mm)
2 3 5 7 1.0 2 3 5 7 10 2 3
Collector Current, IC -- A
1.0
IT03990
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
IT03991
Collector Dissipation, PC -- W
0.8
M ou ed nt on
0.6
ac a er m ic a bo
0.4
rd 00 (6 m m
2!
0.2
8 0. m m )
0 0 50 100 150 200 IT03992
Ambient Temperature, Ta -- °C
No.7130-3/4
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